BFT25 ,NPN 2 GHz wideband transistor
BFT25 ,NPN 2 GHz wideband transistorfeatures low current consumption (100 A to 1 mA); due to its high transition frequency, it also 12 ..
BFT25 ,NPN 2 GHz wideband transistor
BFT25A ,NPN 5 GHz wideband transistorLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
BFT25A ,NPN 5 GHz wideband transistorFeatures and benefits Low current consumption (100 A to 1 mA) Low noise figure Gold metallizati ..
BFT46 ,N-channel silicon FET
BSH205 ,P-channel vertical D-MOS logic level FETLimiting values in accordance with the Absolute Maximum System (IEC 134)SYMBOL PARAMETER CONDITIONS ..
BSH207 ,P-channel enhancement mode MOS transistor
BSH207 ,P-channel enhancement mode MOS transistor
BSH207 ,P-channel enhancement mode MOS transistor
BSL202SN , OptiMOS2 Small-Signal-Transistor
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BFT25
NPN 2 GHz wideband transistor
NXP Semiconductors Product specification
NPN 2 GHz wideband transistor BFT25
DESCRIPTIONNPN transistor in a plastic SOT23
envelope.
It is primarily intended for use in RF
low power amplifiers, such as in
pocket phones, paging systems, etc.
The transistor features low current
consumption (100 A to 1 mA); due to
its high transition frequency, it also
has excellent wideband properties
and low noise up to high frequencies.
PINNING
QUICK REFERENCE DATA
LIMITING VALUESIn accordance with the Absolute Maximum System (IEC 134).
Note Ts is the temperature at the soldering point of the collector tab.
NXP Semiconductors Product specification
NPN 2 GHz wideband transistor BFT25
NXP Semiconductors Product specification
NPN 2 GHz wideband transistor BFT25
NXP Semiconductors Product specification
NPN 2 GHz wideband transistor BFT25
NXP Semiconductors Product specification
NPN 2 GHz wideband transistor BFT25
