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BFS505ONN/a6000avaiNPN 9 GHz wideband transistor


BFS505 ,NPN 9 GHz wideband transistorFEATURES PINNING Low current consumptionPIN DESCRIPTION3handbook, 2 columns High power gainCode: ..
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BFS505
NPN 9 GHz wideband transistor

NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFS505
FEATURES
Low current consumption High power gain Low noise figure High transition frequency Gold metallization ensures
excellent reliability SOT323 envelope.
DESCRIPTION

NPN transistor in a plastic SOT323
envelope.
It is intended for low power amplifiers,
oscillators and mixers particularly in
RF portable communication
equipment (cellular phones, cordless
phones, pagers) up to 2 GHz.
PINNING
QUICK REFERENCE DATA
Note
Ts is the temperature at the soldering point of the collector tab.
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFS505
LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCE
Note
Ts is the temperature at the soldering point of the collector tab.
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFS505
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFS505
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFS505
In Figs 6 to 9, GUM= maximum unilateral power gain;
MSG= maximum stable gain; Gmax= maximum available
gain.
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFS505
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