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BFR92TINFN/a36000avaiRF-Bipolar


BFR92T ,RF-BipolarBFR92TNPN Silicon RF TransistorPreliminary data3

BFR92T
RF-Bipolar
NPN Silicon RF Transistor
Preliminary data
For broadband amplifiers up to 2 GHz and
fast non-saturated switches at collector currents
from 0.5 mA to 20 mA Complementary type: BFT92T (PNP)
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Maximum Ratings
Thermal Resistance
TS is measured on the collector lead at the soldering point to the pcbFor calculation of RthJA please refer to Application Note Thermal Resistance
BFR92T
Electrical Characteristics at T
A = 25°C, unless otherwise specified.
DC characteristics
BFR92T
Electrical Characteristics at T
A = 25°C, unless otherwise specified.
AC characteristics (verified by random sampling)
Gma = |S21 / S12| (k-(k2-1)1/2)
BFR92T
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :
Transistor Chip Data

All parameters are ready to use, no scalling is necessary.
Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil-und Satellitentechnik (IMST)
Package Equivalent Circuit:
BFR92T
Total power dissipation P
tot = f (TS)
50
100
150
200
300
tot
Permissible Pulse Load R
thJS = f (tp)
10 0 10 10 10
thJS
Permissible Pulse Load
totmax/PtotDC = f (tp)
10 0 10 10 10
totmax
/ P
totDC
BFR92T
Collector-base capacitance C
cb = f (VCB)
f = 1MHz
0.2
0.4
0.8
Transition frequency f
T = f (IC) CE = Parameter
Power Gain G
ma, Gms = f(IC)
f = 0.9GHz CE = Parameter
-2
10
14
22
Power Gain G
ma, Gms = f(IC)
f = 1.8GHz CE = Parameter
-6
-3
12
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