IC Phoenix
 
Home ›  BB18 > BFR460L3,ESD-Hardened RF-Bipolar NPN Transistors in Standard SOT343 and TSLP-3 (single) & TSLP-6 (dual) Leadless Packages
BFR460L3 Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
BFR460L3INFINEONN/a12000avaiESD-Hardened RF-Bipolar NPN Transistors in Standard SOT343 and TSLP-3 (single) & TSLP-6 (dual) Leadless Packages


BFR460L3 ,ESD-Hardened RF-Bipolar NPN Transistors in Standard SOT343 and TSLP-3 (single) & TSLP-6 (dual) Leadless Packagesapplications• Ideal for VCO modules and low noise amplifiers3• Low noise figure: 1.1 dB at 1.8 GHz1 ..
BFR505 ,NPN 9 GHz wideband transistorLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
BFR505T ,NPN 9 GHz wideband transistorAPPLICATIONSLow power amplifiers, oscillators and Fig.1 SOT416.mixers particularly in RF portable ..
BFR53 ,NPN 2 GHz wideband transistor
BFR53 ,NPN 2 GHz wideband transistor
BFR53 ,NPN 2 GHz wideband transistor
BSC0901NS , n-Channel Power MOSFET
BSC0902NS , n-Channel Power MOSFET
BSC0906NS , n-Channel Power MOSFET
BSC0908NS , n-Channel Power MOSFET
BSC0909NS , n-Channel Power MOSFET
BSC090N03MS G , OptiMOS™3 M-Series Power-MOSFET


BFR460L3
ESD-Hardened RF-Bipolar NPN Transistors in Standard SOT343 and TSLP-3 (single) & TSLP-6 (dual) Leadless Packages
BFR460L3
NPN Silicon RF Transistor

Preliminary data
• For low voltage / low current applications
• Ideal for VCO modules and low noise amplifiers
• Low noise figure: 1.1 dB at 1.8 GHz
• World's smallest SMD leadless package
• Excellent ESD performance
typical value > 1500V (HBM)
• High fT of 22 GHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Maximum Ratings
Thermal Resistance
Ptot due to Maximum RatingsTS is measured on the collector lead at the soldering point to the pcbFor calculation of RthJA please refer to Application Note Thermal Resistance
BFR460L3
Electrical Characteristics at T
A = 25°C, unless otherwise specified
Characteristics
BFR460L3
AC Characteristics (verified by random sampling)
Gma = |S21 / S12| (k-(k²-1)1/2), Gms = S21 / S12IP3 value depends on termination of all intermodulation frequency components.
BFR460L3
Collector-base capacitance C
cb= ƒ(VCB)
f = 1MHz
0.1
0.2
0.3
0.4
0.5
0.6
0.8
Transition frequency f
T= ƒ(IC)
f = 1 GHzCE = parameter in V
10
12
14
16
18
20
22
26
Power gain G
ma, Gms, |S21|2 = ƒ (f)CE = 3 V, IC = 20 mA
10
15
20
25
30
35
40
50
Power gain G
ma, Gms = ƒ (IC)CE = 3V
f = parameter in GHz
10
12
14
16
18
20
24
BFR460L3
Power gain G
ma, Gms = ƒ (VCE)C = 20 mA
f = parameter in GHz
10
12
14
16
18
20
24

ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED