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BFR30PHIN/a269avaiN-channel FET


BFR30 ,N-channel FETAPPLICATIONS12• Low level general purpose amplifiers in thick andthin-film circuits.Top view MAM385 ..
BFR30 ,N-channel FETLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL PARAMETER CON ..
BFR31 ,N-channel field-effect transistorsAPPLICATIONS Low level general purpose amplifiers in thick and 12thin-film circuits.Top view MAM38 ..
BFR340F ,RF-BipolarBFR340FNPN Silicon RF TransistorPreliminary data

BFR30
N-channel field-effect transistors

Philips Semiconductors Product specification
N-channel field-effect transistors BFR30; BFR31
DESCRIPTION

Planar epitaxial symmetrical junction N-channel
field-effect transistor in a plastic SOT23 package.
APPLICATIONS
Low level general purpose amplifiers in thick and
thin-film circuits.
PINNING - SOT23
Note
Drain and source are interchangeable.
QUICK REFERENCE DATA
Philips Semiconductors Product specification
N-channel field-effect transistors BFR30; BFR31
LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).
Note
Mounted on a ceramic substrate of 8×10× 0.7 mm.
THERMAL CHARACTERISTICS
Note
Mounted on a ceramic substrate of 8×10× 0.7 mm.
Philips Semiconductors Product specification
N-channel field-effect transistors BFR30; BFR31
CHARACTERISTICS
=25 °C unless otherwise specified.
Philips Semiconductors Product specification
N-channel field-effect transistors BFR30; BFR31
Philips Semiconductors Product specification
N-channel field-effect transistors BFR30; BFR31
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