BFR181T ,RF-BipolarBFR181TNPN Silicon RF TransistorPreliminary data3
BFR181T
RF-Bipolar
NPN Silicon RF Transistor
Preliminary data For low noise, high-gain broadband amplifiers at
collector currents from 0.5 mA to 12 mA fT = 8 GHz
F = 1.45 dB at 900 MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Maximum Ratings
Thermal ResistanceTS is measured on the collector lead at the soldering point to the pcbFor calculation of RthJA please refer to Application Note Thermal Resistance
BFR181T
Electrical Characteristics at TA = 25°C, unless otherwise specified.
DC characteristics
BFR181T
Electrical Characteristics at TA = 25°C, unless otherwise specified.
AC characteristics (verified by random sampling)Gms = |S21 / S12|Gma = |S21 / S12| (k-(k2-1)1/2)
BFR181T
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :
Transistor Chip DataAll parameters are ready to use, no scalling is necessary.
Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil-und Satellitentechnik (IMST)
Package Equivalent Circuit:
BFR181T
Total power dissipation Ptot = f (TS)
20
40
60
80
100
120
140
160
200
tot
Permissible Pulse Load RthJS = f (tp)
10 0 10 10 10
thJS
Permissible Pulse Loadtotmax/PtotDC = f (tp)
10 0 10 10 10
totmax
/ P
totDC
BFR181T
Collector-base capacitance Ccb = f (VCB)
f = 1MHz
0.05
0.1
0.15
0.2
0.25
0.3
0.4
Transition frequency fT = f (IC) CE = Parameter
Power Gain Gma, Gms = f(IC)
f = 0.9GHz CE = Parameter
10
13
16
22
Power Gain Gma, Gms = f(IC)
f = 1.8GHz CE = Parameter
15
