BFR106 ,RF-BipolarBFR106NPN Silicon RF Transistor3
BFR106
RF-Bipolar
BFR106
NPN Silicon RF Transistor For low noise, high-gain amplifiers For linear broadband amplifiers Special application: antenna amplifiers Complementary type: BFR194 (PNP)
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Maximum Ratings
Thermal ResistanceTS is measured on the collector lead at the soldering point to the pcbFor calculation of RthJA please refer to Application Note Thermal Resistance
BFR106
Electrical Characteristics at TA = 25°C, unless otherwise specified.
DC characteristics
BFR106
Electrical Characteristics at TA = 25°C, unless otherwise specified.
AC characteristics (verified by random sampling)
BFR106
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :
Transistor Chip DataAll parameters are ready to use, no scalling is necessary.
Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil-und Satellitentechnik (IMST)
Package Equivalent Circuit:
BFR106
Total power dissipation Ptot = f (TS)
100
200
300
400
500
600
800
tot
Permissible Pulse Load RthJS = f (tp)
10 0 10 10 10 10
thJS
Permissible Pulse Loadtotmax/PtotDC = f (tp) 0 10 10 10
tot
ax
/ P
totDC
BFR106
Collector-base capacitance Ccb = f (VCB)
f = 1MHz
0.0
0.4
0.8
1.2
1.6
2.0
2.4
3.2
Transition frequency fT = f (IC) CE = Parameter
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
6.0
Power Gain Gma, Gms = f(IC)
f = 0.9GHz CE = Parameter
10
14
Power Gain Gma, Gms = f(IC)
f = 1.8GHz CE = Parameter
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
9.0
