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BFP620F E7764
RF-Bipolar
BFP620F E7764
NPN Silicon Germanium RF TransistorPreliminary data
• High gain low noise RF transistor
• Small package 1.4 x 0.8 x 0.59 mm
• Outstanding noise figure F = 0.7 dB at 1.8 GHz
Outstanding noise figure F = 1.3 dB at 6 GHz
• Maximum stable gain
Gms = 21 dB at 1.8 GHz
Gma = 10 dB at 6 GHz
• Gold metallization for extra high reliability
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ESD: Electrostatic discharge sensitive device, observe handling precaution!
Maximum Ratings
Thermal ResistanceTS is measured on the collector lead at the soldering point to the pcbFor calculation of RthJA please refer to Application Note Thermal Resistance
BFP620F E7764
Electrical Characteristics at TA = 25°C, unless otherwise specified
DC Characteristics
BFP620F E7764
AC Characteristics (verified by random sampling)Gma = |S21e / S12e| (k-(k²-1)1/2), Gms = |S21e / S12e|IP3 value depends on termination of all intermodulation frequency components.
BFP620F E7764
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transitor Chip Data:IS =0.22fA
VAF =1000V
NE = 2-
VAR =2V
NC =2-
RBM =2.707Ω
CJE =250.7fF
TF =1.43ps
ITF =2.4A
VJC =0.6V
TR =0.2ns
MJS =0.5-
XTI =3-
AF =2-
TITF1-0.0065-
BF =425-
IKF =0.25A
BR =50-
IKR =10mA
RB =3.129Ω
RE =0.6-
VJE =0.75V
XTF =10-
PTF =0deg
MJC =0.5-
CJS =128.1fF
NK =-1.42-
FC =0.8
KF =7.291E-11
TITF21.0E-5
NF =1.025-
ISE =21fA
NR =1-
ISC =18pA
IRB =1.522mA
RC =2.364Ω
MJE =0.3-
VTF =1.5V
CJC =124.9fF
XCJC =1-
VJS =0.52V
EG =1.078eV
TNOM298K
All parameters are ready to use, no scalling is necessary.LB0 =0.22nHE0 =0.28nHC0 =0.22nHB0-E0 =0.1-B0-C0 =0.01-E0-C0 =0.11-BE =34fFBC =2fFCE =33fFBI =0.42nHLBI =0.15ΩEI =0.26nHLEI =0.11ΩCI =0.35nH
RLI =0.13ΩBI-EI =-0.05-BI-CI =-0.08-0.2-
To avoid high complexity of the package equivalent circuit,
both emitter leads of TSFP-4 are combined in one electrical
connection.RLxI are series resistors for the inductances LxI
and Kxa-yb are the coupling coefficients between the
inductances Lxa and Lyb.Valid up to 6GHz
BFP620F E7764
Total power dissipation Ptot = ƒ(TS)
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100
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160
200
tot
Permissible Pulse Load RthJS = ƒ(tp)
10 0 10 10 10
thJS
Permissible Pulse Loadtotmax/PtotDC = ƒ(tp)
10 0 10 10
totmax
totDC
Collector-base capacitance Ccb= ƒ(VCB)
f = 1MHz
0.05
0.1
0.15
0.2
0.25
0.3
0.4
BFP620F E7764
Transition frequency fT= ƒ(IC)
f = 1GHzCE = Parameter in V
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Power gain Gma, Gms = ƒ(IC)CE = 1.5V
f = Parameter in GHz
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22
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30
Power Gain Gma, Gms = ƒ(f),21|² = f (f)CE = 1.5V, IC = 50mA
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50
Power gain Gma, Gms = ƒ (VCE)C = 50mA
f = Parameter in GHz
-4
12
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20
24
30
