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BFP193INFINEONN/a99000avaiRF-Bipolar


BFP193 ,RF-BipolarcharacteristicsCollector-emitter breakdown voltage 12 - - VV(BR)CEOI = 1 mA, I = 0 C BCollector-emi ..
BFP193T ,Silicon NPN Planar RF Transistor Document Number 850154 (5) Rev. 1, 20-Jan-99BFP193T/BFP193TW/BFP193TRWVishay SemiconductorsOzone D ..
BFP196 ,RF-BipolarcharacteristicsCollector-emitter breakdown voltage 12 - - VV(BR)CEOI = 1 mA, I = 0 C BCollector-emi ..
BFP196W ,RF-BipolarcharacteristicsCollector-emitter breakdown voltage 12 - - VV(BR)CEOI = 1 mA, I = 0 C BCollector-emi ..
BFP23 ,PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage)

BFP193
RF-Bipolar
BFP193
NPN Silicon RF Transistor
For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers fT = 8 GHz
F = 1.3 dB at 900 MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Maximum Ratings
Thermal Resistance
TS is measured on the collector lead at the soldering point to the pcbFor calculation of RthJA please refer to Application Note Thermal Resistance
BFP193
Electrical Characteristics at T
A = 25°C, unless otherwise specified.
DC characteristics
BFP193
Electrical Characteristics at T
A = 25°C, unless otherwise specified.
AC characteristics (verified by random sampling)
Gma = |S21 / S12| (k-(k2-1)1/2)
BFP193
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :
Transistor Chip Data

All parameters are ready to use, no scalling is necessary.
Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil-und Satellitentechnik (IMST)
Package Equivalent Circuit:
BFP193
Total power dissipation P
tot = f (TS)
50
100
150
200
250
300
350
400
450
500
600
tot
Permissible Pulse Load R
thJS = f (tp)
10 0 10 10 10 10
thJS
Permissible Pulse Load
totmax/PtotDC = f (tp) 0 10 10 10
tot
ax
/ P
totDC
BFP193
Collector-base capacitance C
cb = f (VCB)
f = 1MHz
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.3
Transition frequency f
T = f (IC) CE = Parameter
10
Power Gain G
ma, Gms = f(IC)
f = 0.9GHz CE = Parameter
10
12
14
16
20
Power Gain G
ma, Gms = f(IC)
f = 1.8GHz CE = Parameter
10
11
13
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