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BFM520PHIN/a19250avaiDual NPN wideband transistor
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BFM520 ,Dual NPN wideband transistorLIMITING VALUESIn accordance with the Absolute Maximum System (IEC 134).SYMBOL PARAMETER CONDITIONS ..
BFM520 ,Dual NPN wideband transistorapplications in theMarking code: N2.GHz-range in the RF front end of analog and digital cellularpho ..
BFM520 ,Dual NPN wideband transistorFEATURES PINNING - SOT363A• Small sizePIN SYMBOL DESCRIPTION• Temperature and h matchedFE1b base 11 ..
BFM520 ,Dual NPN wideband transistor
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BFM520
Dual NPN wideband transistor

Philips Semiconductors Product specification
Dual NPN wideband transistor BFM520
FEATURES
Small size Temperature and hFE matched Low noise and high gain High gain at low current and low capacitance at low
voltage Gold metallization ensures excellent reliability.
APPLICATIONS
Oscillator and buffer amplifiers Balanced amplifiers LNA/mixers.
DESCRIPTION

Dual transistor with two silicon NPN RF dies in a surface
mount 6-pin SOT363 (S-mini) package. The transistor is
primarily intended for wideband applications in the
GHz-range in the RF front end of analog and digital cellular
phones, cordless phones, radar detectors, pagers and
satellite TV-tuners.
PINNING - SOT363A
QUICK REFERENCE DATA
Philips Semiconductors Product specification
Dual NPN wideband transistor BFM520
LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).
THERMAL CHARACTERISTICS
Note to the Limiting values and Thermal characteristics
Ts is the temperature at the soldering point of the collector pin.
Philips Semiconductors Product specification
Dual NPN wideband transistor BFM520
CHARACTERISTICS
=25 °C unless otherwise specified.
Note
GUM is the maximum unilateral power gain, assuming s12 is zero.UM 10212112– () 1s222– ()------------------------------------------------------------ dBlog=
Philips Semiconductors Product specification
Dual NPN wideband transistor BFM520
Philips Semiconductors Product specification
Dual NPN wideband transistor BFM520
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