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BFG541NXPN/a52000avaiNPN 9 GHz wideband transistor


BFG541 ,NPN 9 GHz wideband transistorapplications in the GHz range, such as analog and digital cellular 123telephones, cordless telephon ..
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BFG541
NPN 9 GHz wideband transistor

NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFG541
FEATURES
High power gain Low noise figure High transition frequency Gold metallization ensures
excellent reliability.
DESCRIPTION

NPN silicon planar epitaxial
transistor, intended for wideband
applications in the GHz range, such
as analog and digital cellular
telephones, cordless telephones
(CT1, CT2, DECT, etc.), radar
detectors, satellite TV tuners (SATV),
MATV/CATV amplifiers and repeater
amplifiers in fibre-optic systems.
The transistors are mounted in a
plastic SOT223 envelope.
PINNING
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFG541
QUICK REFERENCE DATA
LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCE
Note
Ts is the temperature at the soldering point of the collector tab.
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFG541
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFG541
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFG541
In Figs 6 to 9, GUM = maximum power gain; MSG =
maximum stable gain; Gmax = maximum available gain.
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFG541
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