BFG520/XR ,NPN 9 GHz wideband transistorFEATURES PINNING4 3fpage• High power gainPIN DESCRIPTION• Low noise figureBFG520 (Fig.1) Code: N36• ..
BFG520/XR ,NPN 9 GHz wideband transistorapplications2 emitterin the RF frontend in the GHz range,3 basehandbook, 2 columnssuch as analog an ..
BFG520/XR ,NPN 9 GHz wideband transistorapplications2 emitterin the RF frontend in the GHz range,3 basehandbook, 2 columnssuch as analog an ..
BFG520W/X ,NPN 9 GHz wideband transistorsapplications in the GHz range,such as analog and digital cellular telephones, cordlesstelephones (C ..
BFG520X ,NPN 9 GHz wideband transistorapplications2 emitterin the RF frontend in the GHz range,3 basehandbook, 2 columnssuch as analog an ..
BFG520XR ,NPN 9 GHz wideband transistor
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BFG520-BFG520/X-BFG520/XR-BFG520X
NPN 9 GHz wideband transistor
Philips Semiconductors Product specification
NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR
FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures
excellent reliability.
DESCRIPTIONNPN silicon planar epitaxial
transistors, intended for applications
in the RF frontend in the GHz range,
such as analog and digital cellular
telephones, cordless telephones
(CT1, CT2, DECT, etc.), radar
detectors, pagers and satellite TV
tuners (SATV) and repeater
amplifiers in fibre-optic systems.
The transistors are encapsulated in
4-pin, dual-emitter plastic SOT143
and SOT143R envelopes.
PINNING
QUICK REFERENCE DATA
Philips Semiconductors Product specification
NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR
LIMITING VALUESIn accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCE
Note Ts is the temperature at the soldering point of the collector tab.
Philips Semiconductors Product specification
NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR
CHARACTERISTICSTj = 25 °C unless otherwise specified.
Notes GUM is the maximum unilateral power gain, assuming S12 is zero and IC= 20 mA; VCE= 6 V; RL =50 Ω; f = 900 MHz; Tamb =25 °C;= 900 MHz; fq= 902 MHz;
measured at f(2p−q)= 898 MHz and f(2q−p)= 904 MHz. dim= −60 dB (DIN 45004B); =Vo;Vq =Vo −6 dB; Vr =Vo −6 dB;= 795.25 MHz; fq= 803.25 MHz; fr= 805.25 MHz;
measured at f(p+q−r)= 793.25 MHzUM 10 log S2111– 1S22– ------------------------------------------------------------- -dB.=
Philips Semiconductors Product specification
NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR
Philips Semiconductors Product specification
NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR
In Figs 7 to 10, GUM= maximum unilateral power gain;
MSG = maximum stable gain; Gmax= maximum available
gain.
Philips Semiconductors Product specification
NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR
