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BFG21WPHLN/a12490avaiUHF power transistor


BFG21W ,UHF power transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL PARAMETER CON ..
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BFG21W
UHF power transistor

Philips Semiconductors Product specification
UHF power transistor BFG21W
FEATURES
High power gain High efficiency 1.9 GHz operating area Linear and non-linear operation.
APPLICATIONS
Common emitter class-AB output stage in hand held
radio equipment at 1.9 GHz such as DECT, PHS, etc. Driver for DCS1800, 1900.
DESCRIPTION

NPN double polysilicon bipolar power transistor with
buried layer for low voltage medium power applications
encapsulated in a plastic, 4-pin dual-emitter SOT343R
package.
PINNING
QUICK REFERENCE DATA

RF performance at Ts≤60 °C in a common emitter test circuit.
Philips Semiconductors Product specification
UHF power transistor BFG21W
LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).
Note
Ts is the temperature at the soldering point of the emitter pins.
THERMAL CHARACTERISTICS
Note
Ts is the temperature at the soldering point of the emitter pins.
Philips Semiconductors Product specification
UHF power transistor BFG21W
CHARACTERISTICS
=25 °C unless otherwise specified.
APPLICATION INFORMATION

RF performance at Ts≤60 °C in a common emitter test circuit (see Figs4 and5).
Ruggedness in class-AB operation

The transistor is capable of withstanding a load mismatch
corresponding to VSWR=6: 1 through all phases at dBm output power under pulsed conditions:δ =1:2;=5 ms; f= 1.9 GHz at VCE= 4.5V.
Philips Semiconductors Product specification
UHF power transistor BFG21W
List of components used in test circuit
(see Figs4 and5)
Notes
American Technical Ceramics type 100A or capacitor of same quality. The striplines are on a double copper-clad printed-circuit board with PTFE fibre-glass dielectric (εr= 6.15,
tanδ= 0.0019); thickness 0.64 mm, copper cladding=35 μm.
Philips Semiconductors Product specification
UHF power transistor BFG21W
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