BFG194 ,PNP Silicon RF transistor for low dis...BFG 194PNP Silicon RF Transistor
BFG194
PNP Silicon RF transistor for low dis...
BFG 194
PNP Silicon RF Transistor For low distortion broadband amplifiers in
antenna and telecommunication systems up
to 1.5 GHz at collector currents from 20 mA
to 80 mA
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Maximum Ratings
Thermal Resistance
BFG 194
Electrical Characteristics at TA = 25°C, unless otherwise specified.
DC characteristics
BFG 194
Electrical Characteristics at TA = 25°C, unless otherwise specified.
AC characteristics (verified by random sampling)
BFG 194
Total power dissipation Ptot = f (TA*, TS)
* Package mounted on epoxy
100
200
300
400
500
600
700
800
900
1000
1200
tot
Permissible Pulse Load RthJS = f (tp)
10 0 10 10 10
thJS
Permissible Pulse Loadtotmax/PtotDC = f (tp) 0 10 10 10
tot
ax
/ P
totDC
BFG 194
Collector-base capacitance Ccb = f (VCB)
f = 1MHz
0.0
0.5
1.0
1.5
2.0
2.5
3.0
4.0
Transition frequency fT = f (IC) CE = Parameter
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.5
Power Gain Gma, Gms = f(IC)
f = 1.8GHz CE = Parameter
-1.0
0.0
1.0
2.0
3.0
4.0
5.0
7.0
Power Gain Gma, Gms = f(IC)
f = 0.9GHz CE = Parameter
12
12
12
BFG 194
Power Gain Gma, Gms = f(VCE):_____
|S21|2 = f(VCE):---------
f = Parameter
10
12
Intermodulation Intercept Point IP3=f(IC)
(3rd order, Output, ZS=ZL=50) CE = Parameter, f = 900MHz
12
14
16
18
20
22
24
26
28
30
32
34
36
42
Power Gain Gma, Gms = f(f) CE = Parameter
-5
10
15
20
30
Power Gain |S21|2= f(f) CE = Parameter
-2
10
12
14
16
18
20
22
28
