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BFG10/X |BFG10XPHILIPSN/a2000avaiNPN 2 GHz RF power transistor
BFG10/X |BFG10XNXP/PHILIPSN/a3000avaiNPN 2 GHz RF power transistor
BFG10/X |BFG10XNXPN/a3000avaiNPN 2 GHz RF power transistor


BFG10/X ,NPN 2 GHz RF power transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL PARAMETER CON ..
BFG10/X ,NPN 2 GHz RF power transistor
BFG10/X ,NPN 2 GHz RF power transistor
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BFG11/X ,NPN 2 GHz RF power transistor
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BFG10/X
NPN 2 GHz RF power transistor

Philips Semiconductors Product specification
NPN 2 GHz RF power transistor BFG10; BFG10/X
FEATURES
High power gain High efficiency Small size discrete power amplifier 1.9 GHz operating area Gold metallization ensures
excellent reliability.
APPLICATIONS
Common emitter class-AB
operation in hand-held radio
equipment at 1.9 GHz.
DESCRIPTION

NPN silicon planar epitaxial transistor
encapsulated in plastic, 4-pin
dual-emitter SOT143 package.
PINNING
MARKING
QUICK REFERENCE DATA

RF performance at Tamb =25 °C in a common-emitter test circuit (see Fig.7).
LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).
Note
Ts is the temperature at the soldering point of the collector pin.
Philips Semiconductors Product specification
NPN 2 GHz RF power transistor BFG10; BFG10/X
THERMAL CHARACTERISTICS
Note
Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
=25 °C unless otherwise specified.
Philips Semiconductors Product specification
NPN 2 GHz RF power transistor BFG10; BFG10/X
APPLICATION INFORMATION

RF performance at Tamb =25 °C in a common-emitter test circuit (see Fig.7).
Ruggedness in class-AB operation

The BFG10 is capable of withstanding a load mismatch corresponding to VSWR=8: 1 through all phases, at rated
output power under pulsed conditions up to a supply voltage of 7 V, f= 1.9 GHz and a duty cycle of 1:8.
Philips Semiconductors Product specification
NPN 2 GHz RF power transistor BFG10; BFG10/X
SPICE parameters for the BFG10 crystal
Note
These parameters have not been extracted,
the default values are shown.
List of components
(see Fig.6)
Philips Semiconductors Product specification
NPN 2 GHz RF power transistor BFG10; BFG10/X
Test circuit information
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