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BF998W
Silicon N-Channel MOSFET Tetrode
BF998...
Silicon N_Channel MOSFET Tetrode• Short-channel transistor
with high S / C quality factor
• For low-noise, gain-controlled
input stage up to 1 GHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Maximum Ratings
Thermal ResistanceFor calculation of RthJA please refer to Application Note Thermal Resistance
BF998...
Electrical Characteristics
DC Characteristics
BF998...
Electrical Characteristics
AC Characteristics
BF998...
Total power dissipation Ptot = ƒ(TS)
BF998, BF998R
20
40
60
80
100
120
140
160
180
220
tot
Total power dissipation Ptot = ƒ(TS)
BF998W
20
40
60
80
100
120
140
160
180
220
tot
Output characteristics ID = ƒ(VDS)G2S = 4 V
VG1S = Parameter
10
12
14
16
18
20
22
26
Gate 1 forward transconductancefs = ƒ(ID)
VDS = 5V, VG2S = Parameter
10
12
14
16
18
20
22
26
BF998...
Gate 1 forward transconductancefs1 = ƒ (VG1S)
10
12
14
16
18
20
22
26
Drain current ID = ƒ(VG1S)DS = 5VG2S = Parameter
10
15
20
30
Power gain Gps = ƒ (VG2S)
f = 45 MHz
10
15
20
30
Noise figure F = ƒ (VG2S)
f = 45 MHz
10
BF998...
Power gain Gps = ƒ (VG2S)
f = 800 MHz
-10
-5
10
20
Power gain Gps = ƒ (VG2S)
f = 800 MHz
-10
-5
10
20
Gate 1 input capacitance Cg1ss = ƒ (VG1S)
1.2
1.4
1.6
1.8
2.2
2.6
g1ss
Output capacitance Cdss = ƒ(VDS)
0.5
1.5
2.5
dss
