BF998-BF998R Fast Delivery |IC PHOENIX CO.,LIMITED

Home › B › B17 > BF998-BF998R,Silicon N-channel dual-gate MOS-FETs

If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email

Partno	Mfg	Dc	Qty	Available	Descript
BF998	VISHAY	N/a	10000	avai	Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz)
BF998R	VISHAY	N/a	885000	avai	Silicon N-channel dual-gate MOS-FETs

BF998R ,Silicon N-channel dual-gate MOS-FETsRev. 4, 23-Jun-991 (8)BF998/BF998R/BF998RWVishay SemiconductorsMaximum Thermal ResistanceT = 25

BF998-BF998R
N-Channel Dual Gate MOS&dash;Fieldeffect Tetrode, Depletion Mode
BF998/BF998R/BF998RW
Vishay Semiconductors
www.vishay.com
Document Number 85011
N–Channel Dual Gate MOS-Fieldeffect Tetrode,
Depletion Mode
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Input and mixer stages in UHF tuners.
Features Integrated gate protection diodes Low noise figure Low feedback capacitance High cross modulation performance Low input capacitance High AGC-range High gain3
BF998 Marking: MO
Plastic case (SOT 143)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 1
BF998R Marking: MOR
Plastic case (SOT 143R)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 14
13 56613 654
BF998RW Marking: WMO
Plastic case (SOT 343R)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified

TEL:86-533-2716050 FAX:86-533-2716790