Partno |
Mfg |
Dc |
Qty |
Available | Descript |
BF966 |
siemens |
N/a |
3000 |
|
|
BF966 |
|
N/a |
576 |
|
|
BF966S ,N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion ModeRev. 3, 20-Jan-99 3 (8)I – Drain Current ( mA ) I – Drain Current ( mA ) P – Total Power Di ..
BF966S ,N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion ModeRev. 3, 20-Jan-99 1 (8)BF966SVishay SemiconductorsElectrical DC CharacteristicsT = 25