| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| BF926 |
NationalSemi|National Semiconductor |
N/a |
3850 |
 |
PNP SILICON PLANAR TRANSISTOR |
BF930 SIEMENS
BF926 , PNP SILICON PLANAR TRANSISTOR
BF959 , 0.625W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 0.100A Ic, 35
BF959 , 0.625W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 0.100A Ic, 35
BF960 ,N-CHANNEL DUAL GATE MOS-FIELDEFFECT TETRODE.DEPLETION MODEApplications: Input- and Mixerstages especially for UHFTV-tuners up to 900 MHz
BF960 ,N-CHANNEL DUAL GATE MOS-FIELDEFFECT TETRODE.DEPLETION MODEot TELEFUNKEN ELECTRONIC alt p I manual: tltl0iil30 n .ALGGV r-agrt.sc '. -.1rEiuElFiglkllltlm elec ..
BS107 ,Enhancement-Mode MOSFET TransistorsVN2010L/BS107Vishay SiliconixN-Channel 200-V (D-S) MOSFETs Part Number V Min (V) r Max ..
BS107A ,N-channel enhancement mode vertical D-MOS transistorMAXIMUM RATINGSDRating Symbol Value UnitDrain−Source Voltage V 200 VdcDSGate−Source Voltage− Contin ..
BS107ARL1 ,Small Signal MOSFET 250 mAmps, 200 VoltsMaximum ratings applied to the device are individual stress limit values (not12normal operating con ..
