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BF908RPHILIPSN/a2700avaiDual-gate MOS-FETs
BF908RNXPN/a1075avaiDual-gate MOS-FETs


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BF908R
Dual-gate MOS-FETs

Philips Semiconductors Product specification
Dual-gate MOS-FETs BF908; BF908R
FEATURES
High forward transfer admittance Short channel transistor with high forward transfer
admittance to input capacitance ratio Low noise gain controlled amplifier up to 1 GHz.
APPLICATIONS
VHF and UHF applications with 12 V supply voltage,
such as television tuners and professional
communications equipment.
DESCRIPTION

Depletion type field-effect transistor in a plastic
microminiature SOT143 or SOT143R package. The
transistors are protected against excessive input voltage
surges by integrated back-to-back diodes between gates
and source.
PINNING
QUICK REFERENCE DATA
Philips Semiconductors Product specification
Dual-gate MOS-FETs BF908; BF908R
LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).
Note
Device mounted on a printed-circuit board.
Philips Semiconductors Product specification
Dual-gate MOS-FETs BF908; BF908R
THERMAL CHARACTERISTICS
Note
Device mounted on a printed-circuit board.
STATIC CHARACTERISTICS
=25 °C; unless otherwise specified.
DYNAMIC CHARACTERISTICS

Common source; Tamb =25 °C; VDS =8V; VG2-S =4V; ID=15 mA; unless otherwise specified.
Philips Semiconductors Product specification
Dual-gate MOS-FETs BF908; BF908R
Philips Semiconductors Product specification
Dual-gate MOS-FETs BF908; BF908R
Table 1
Scattering parameters
Table 2
Noise data
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