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BF904NXP/PHILIPSN/a3000avaiN-channel dual gate MOS-FETs
BF904RNXPN/a2770avaiN-channel dual-gate MOSFET


BF904 ,N-channel dual gate MOS-FETsAPPLICATIONS• VHF and UHF
BF904 ,N-channel dual gate MOS-FETsFEATURES and substrate interconnected and an internal bias circuit toensure good cross-modulation p ..
BF904 ,N-channel dual gate MOS-FETsBF904; BF904RN-channel dual gate MOS-FETsRev. 06 — 13 November 2007 Product data sheetIMPORTANT NOT ..
BF904AR ,N-channel dual-gate MOSFETapplications with3 to 7 V supply voltage such astelevision tuners and professionalhandbook, 2 colum ..
BF904AR ,N-channel dual-gate MOSFETapplications with3 to 7 V supply voltage such astelevision tuners and professionalhandbook, 2 colum ..
BF904R ,N-channel dual-gate MOSFETFEATURES and substrate interconnected and an internal bias circuit toensure good cross-modulation p ..
BS05C1HFAA , Magnetic Pattern Recognition Sensors
BS08E , TRIGGER APPLICATION LEAD MOUNT TYPE, PLANE-MOUNTED TYPE
BS107 ,Enhancement-Mode MOSFET TransistorsVN2010L/BS107Vishay SiliconixN-Channel 200-V (D-S) MOSFETs   Part Number V Min (V) r Max ..
BS107A ,N-channel enhancement mode vertical D-MOS transistorMAXIMUM RATINGSDRating Symbol Value UnitDrain−Source Voltage V 200 VdcDSGate−Source Voltage− Contin ..
BS107ARL1 ,Small Signal MOSFET 250 mAmps, 200 VoltsMaximum ratings applied to the device are individual stress limit values (not12normal operating con ..
BS107G ,Small Signal MOSFET 250 mAmps, 200 Volts2BS107, BS107A10 200180V = 0 VGS1605.0V = 10 VGS 250 mA1402.01201.0100C80iss100 mA0.560400.2Coss20C ..


BF904-BF904R
N-channel dual-gate MOSFET
IMPORTANT NOTICE
Dear customer,
As from October 1st, 2006 Philips Semiconductors has a new trade name NXP Semiconductors, which willbe usedin future data sheets together with new contact
details. data sheets where the previous Philips references remain, please use the new linksas
shown below.
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The copyright notice at the bottom of each page (or elsewhere in the document,
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- © Koninklijke Philips Electronics N.V. (year). All rights reserved -
is replaced with:
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If you have any questions related to the data sheet, please contact our nearest sales
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NXP Semiconductors
BF904; BF904R
N-channel dual gate MOS-FETs
Rev. 06 — 13 November 2007 Product data sheet
NXP Semiconductors Product specification
N-channel dual gate MOS-FETs BF904; BF904R
FEATURES
Specially designed for use at 5 V supply voltage Short channel transistor with high transfer admittance to
input capacitance ratio Low noise gain controlled amplifier up to 1 GHz Superior cross-modulation performance during AGC.
APPLICATIONS
VHF and UHF applications with 3 to 7 V supply voltage
such as television tuners and professional
communications equipment.
DESCRIPTION

Enhancement type field-effect transistor in a plastic
microminiature SOT143B and SOT143R package. The
transistor consists of an amplifier MOS-FET with source
and substrate interconnected and an internal bias circuit to
ensure good cross-modulation performance during AGC.
PINNING
QUICK REFERENCE DATA
NXP Semiconductors Product specification
N-channel dual gate MOS-FETs BF904; BF904R
LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).
Note
Device mounted on a printed-circuit board.
NXP Semiconductors Product specification
N-channel dual gate MOS-FETs BF904; BF904R
THERMAL CHARACTERISTICS
Notes
Device mounted on a printed-circuit board. Ts is the temperature at the soldering point of the source lead.
STATIC CHARACTERISTICS
=25 °C unless otherwise specified.
Note
RG1 connects gate 1 to VGG=5 V; see Fig.20.
DYNAMIC CHARACTERISTICS

Common source; Tamb =25 °C; VDS=5 V; VG2-S=4 V; ID=10 mA; unless otherwise specified.
NXP Semiconductors Product specification
N-channel dual gate MOS-FETs BF904; BF904R
NXP Semiconductors Product specification
N-channel dual gate MOS-FETs BF904; BF904R
NXP Semiconductors Product specification
N-channel dual gate MOS-FETs BF904; BF904R
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