BF904AR ,N-channel dual-gate MOSFETapplications with3 to 7 V supply voltage such astelevision tuners and professionalhandbook, 2 colum ..
BF904AR ,N-channel dual-gate MOSFETapplications with3 to 7 V supply voltage such astelevision tuners and professionalhandbook, 2 colum ..
BF904R ,N-channel dual-gate MOSFETFEATURES and substrate interconnected and an internal bias circuit toensure good cross-modulation p ..
BF904WR ,N-channel dual-gate MOSFET
BF908R ,Dual-gate MOS-FETsapplications with 12 V supply voltage,1 2such as television tuners and professionals,bcommunication ..
BF908R ,Dual-gate MOS-FETs
BS05C1HFAA , Magnetic Pattern Recognition Sensors
BS08E , TRIGGER APPLICATION LEAD MOUNT TYPE, PLANE-MOUNTED TYPE
BS107 ,Enhancement-Mode MOSFET TransistorsVN2010L/BS107Vishay SiliconixN-Channel 200-V (D-S) MOSFETs Part Number V Min (V) r Max ..
BS107A ,N-channel enhancement mode vertical D-MOS transistorMAXIMUM RATINGSDRating Symbol Value UnitDrain−Source Voltage V 200 VdcDSGate−Source Voltage− Contin ..
BS107ARL1 ,Small Signal MOSFET 250 mAmps, 200 VoltsMaximum ratings applied to the device are individual stress limit values (not12normal operating con ..
BS107G ,Small Signal MOSFET 250 mAmps, 200 Volts2BS107, BS107A10 200180V = 0 VGS1605.0V = 10 VGS 250 mA1402.01201.0100C80iss100 mA0.560400.2Coss20C ..
BF904AR
N-channel dual gate MOS-FETs
Philips Semiconductors Product specification
N-channel dual gate MOS-FETs BF904A; BF904AR; BF904AWR
FEATURES Specially designed for use at 5V
supply voltage Short channel transistor with high
transfer admittance to input
capacitance ratio Low noise gain controlled amplifier
up to 1 GHz Superior cross-modulation
performance during AGC.
APPLICATIONS VHF and UHF applications withto7 V supply voltage such as
television tuners and professional
communications equipment.
DESCRIPTIONEnhancement type field-effect
transistors. The transistors consist of
an amplifier MOS-FET with source
and substrate interconnected and an
internal bias circuit to ensure good
cross-modulation performance during
AGC.
The BF904A, BF904AR and
BF904AWR are encapsulated in the
SOT143B, SOT143R and SOT343R
plastic packages respectively.
PINNING
QUICK REFERENCE DATA
Philips Semiconductors Product specification
N-channel dual gate MOS-FETs BF904A; BF904AR; BF904AWR
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).
Note Ts is the temperature of the soldering point of the source lead.
Philips Semiconductors Product specification
N-channel dual gate MOS-FETs BF904A; BF904AR; BF904AWR
THERMAL CHARACTERISTICS
Note Soldering point of the source lead.
STATIC CHARACTERISTICS =25 °C unless otherwise specified.
Note RG1 connects gate 1 to VGG=5 V; see Fig.21.
DYNAMIC CHARACTERISTICSCommon source; Tamb =25 °C; VDS=5 V; VG2-S=4 V; ID=10 mA; unless otherwise specified.
Philips Semiconductors Product specification
N-channel dual gate MOS-FETs BF904A; BF904AR; BF904AWR
Philips Semiconductors Product specification
N-channel dual gate MOS-FETs BF904A; BF904AR; BF904AWR
Philips Semiconductors Product specification
N-channel dual gate MOS-FETs BF904A; BF904AR; BF904AWR
Philips Semiconductors Product specification
N-channel dual gate MOS-FETs BF904A; BF904AR; BF904AWR
