| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| BF337 |
|
N/a |
10 |
 |
Bipolar NPN Device in a Hermetically sealed TO39 |
| BF337 |
Fairchild|Fairchild Semiconductor |
N/a |
2500 |
|
Bipolar NPN Device in a Hermetically sealed TO39 |
BF339 ITT
BF347 MOT
BF337 , Bipolar NPN Device in a Hermetically sealed TO39
BF3506TV ,FULL 50-60Hz RECTIFICATION BRIDGEELECTRICAL CHARACTERISTICS (per diode unless specified)Symbol Parameter Value UnitV Repetitive peak ..
BF3510TV ,FULL 50-60HZ RECTIFICATION BRIDGEELECTRICAL CHARACTERISTICS (per diode unless specified)Symbol Parameter Value UnitV Repetitive peak ..
BF392 , 1.000W General Purpose NPN Plastic Leaded Transistor. 250V Vceo, 1.000A Ic, 25
BF392 , 1.000W General Purpose NPN Plastic Leaded Transistor. 250V Vceo, 1.000A Ic, 25
BR93A56RF-WE2 , High Reliability Serial EEPROMs High Reliability Series
BR93A66F-WE2 , High Reliability Serial EEPROMs High Reliability Series
BR93A66RF-WE2 , High Reliability Serial EEPROMs High Reliability Series
