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BF2040INFN/a363avaiRF-MOSFET
BF2040RINFN/a339avaiRF-MOSFET
BF2040WINFINEONN/a5520avaiSilicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)


BF2040W ,Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)BF2040...Silicon N-Channel MOSFET Tetrode• For low noise , high gain controlled input stages up ..
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BF2040-BF2040R-BF2040W
RF-MOSFET
BF2040...
Silicon N-Channel MOSFET Tetrode

• For low noise , high gain controlled
input stages up to 1GHz
• Operating voltage 5 V
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Maximum Ratings
Thermal Resistance
For calculation of RthJA please refer to Application Note Thermal Resistance
BF2040...
Electrical Characteristics
DC Characteristics
BF2040...
Electrical Characteristics
AC Characteristics - (verified by random sampling)
BF2040...
Total power dissipation P
tot = ƒ(TS)
BF2040, BFD2040R
20
40
60
80
100
120
140
160
180
220
tot
Total power dissipation P
tot = ƒ(TS)
BF2040W
20
40
60
80
100
120
140
160
180
220
tot
Drain current I
D = ƒ(IG1)G2S = 4V
10
12
14
16
18
20
22
24
Output characteristics I
D = ƒ(VDS)G2S = 4 V
VG1S = Parameter
10
12
14
16
18
20
22
26
BF2040...
Gate 1 current I
G1 = ƒ(VG1S)DS = 5VG2S = Parameter
15
30
45
60
75
90
105
120
135
150
165
195
Gate 1 forward transconductance
fs = ƒ(ID)DS = 5V, VG2S = Parameter
10
15
20
25
30
35
45
Drain current I
D = ƒ(VG1S)DS = 5V
VG2S = Parameter
10
12
14
16
18
20
22
24
Drain current I
D = ƒ(VGG)DS = 5V, VG2S = 4V, RG1 = 80kΩ
(connected to VGG, VGG=gate1 supply voltage)
10
12
16
BF2040...
Drain current I
D = ƒ(VGG)G2S = 4VG1 = Parameter in kΩ
10
12
14
16
18
20
22
24
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