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BF1212WR
N-channel dual-gate MOSFET
NXP Semiconductors Product specification
N-channel dual-gate MOS-FETs BF1212; BF1212R;
BF1212WR
FEATURES Short channel transistor with high forward transfer
admittance to input capacitance ratio Low noise gain controlled amplifier Excellent low frequency noise performance Partly internal self-biasing circuit to ensure good
cross-modulation performance during AGC and good stabilization.
APPLICATIONS Gain controlled low noise VHF and UHF amplifiers for V digital and analog television tuner applications.
DESCRIPTIONEnhancement type N-channel field-effect transistor with
source and substrate interconnected. Integrated diodes
between gates and source protect against excessive input
voltage surges. The BF1212, BF1212R and BF1212WR
are encapsulated in the SOT143B, SOT143R and
SOT343R plastic packages respectively.
PINNING
QUICK REFERENCE DATA
NXP Semiconductors Product specification
N-channel dual-gate MOS-FETs BF1212; BF1212R; BF1212WR
ORDERING INFORMATION
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).
Note Ts is the temperature of the soldering point of the source lead.
THERMAL CHARACTERISTICS
NXP Semiconductors Product specification
N-channel dual-gate MOS-FETs BF1212; BF1212R; BF1212WR
STATIC CHARACTERISTICS =25 C unless otherwise specified.
Note RG1 connects G1to VGG =5V.
NXP Semiconductors Product specification
N-channel dual-gate MOS-FETs BF1212; BF1212R; BF1212WR
DYNAMIC CHARACTERISTICSCommon source; Tamb =25 C; VG2-S =4V; VDS =5V; ID=12 mA; unless otherwise specified.
Note Measured in test circuit Fig.21.
NXP Semiconductors Product specification
N-channel dual-gate MOS-FETs BF1212; BF1212R; BF1212WR
NXP Semiconductors Product specification
N-channel dual-gate MOS-FETs BF1212; BF1212R; BF1212WR
NXP Semiconductors Product specification
N-channel dual-gate MOS-FETs BF1212; BF1212R; BF1212WR
