BF1207 Fast Delivery |IC PHOENIX CO.,LIMITED

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BF1207
Dual N-channel dual-gate MOSFET
1. Product profile
1.1 General description
The BF1207 is a combination of two dual gate MOSFET amplifiers with shared source
and gate2 leads and an integrated switch.
The source and substrate are interconnected. Internal bias circuits enable Direct Current
(DC) stabilization and a very good cross-modulation performance during Automatic Gain
Control (AGC). Integrated diodes between the gates and source protect against excessive
input voltage surges. The BF1207 has a SOT363 micro-miniature plastic package.
1.2 Features and benefits Two low noise gain controlled amplifiers in a single package. One with a fully
integrated bias and one with partly integrated bias Internal switch to save external components Superior cross-modulation performance during AGC High forward transfer admittance High forward transfer admittance to input capacitance ratio
1.3 Applications Gain controlled low noise amplifiers for Very High Frequency (VHF) and Ultra High
Frequency (UHF) applications with 5 V supply voltage, such as digital and analog
television tuners and professional communication equipment
BF1207
Dual N-channel dual gate MOSFET
Rev. 2 — 7 September 2011 Product data sheet
NXP Semiconductors BF1207
Dual N-channel dual gate MOSFET
1.4 Quick reference data
[1] Tsp is the temperature at the soldering point of the source lead.
2. Pinning information
Table 1. Quick reference data
Per MOSFET unless otherwise specified.
VDS drain-source voltage DC - - 6 V drain current DC - - 30 mA
Ptot total power dissipation Tsp 107C [1]- - 180 mW
yfs forward transfer admittancef=1 MHz
amplifier A; ID =18 mA 25 30 40 mS
amplifier B; ID =14 mA 26 31 41 mS
Ciss(G1) input capacitance at gate1 f= 100 MHz
amplifier A - 2.2 2.7 pF
amplifier B - 1.9 2.4 pF
Crss reverse transfer capacitancef= 100 MHz - 20 - fF noise figure amplifier A; f= 400 MHz - 1.3 - dB
amplifier B; f= 800 MHz - 1.4 - dB
Xmod cross-modulation input level for k=1 % at dB AGC
amplifier A 100 105- dBV
amplifier B 100 103- dBV junction temperature - - 150 C
Table 2. Discrete pinning
NXP Semiconductors BF1207
Dual N-channel dual gate MOSFET
3. Ordering information
4. Marking
[1]*= p: Made in Hong Kong.= t: Made in Malaysia.= W: Made in China.
5. Limiting values
[1] Tsp is the temperature at the soldering point of the source lead.
Table 3. Ordering information
BF1207 - plastic surface mounted package; 6 leads SOT363
Table 4. Marking
BF1207 M2*
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Per MOSFET
VDS drain-source voltage DC - 6 V drain current DC - 30 mA
IG1 gate1 current - 10 mA
IG2 gate2 current - 10 mA
Ptot total power dissipation Tsp 107C [1] -180 mW
Tstg storage temperature 65 +150 C junction temperature - 150 C
NXP Semiconductors BF1207
Dual N-channel dual gate MOSFET
6. Thermal characteristics
7. Static characteristics
Table 6. Thermal characteristics
Rth(j-sp) thermal resistance from junction
to soldering point
240 K/W
Table 7. Static characteristics =25 C.
Per MOSFET; unless otherwise specified
V(BR)DSS drain-source breakdown voltage VG1-S =VG2-S =0V; ID =10A
amplifier A 6 - - V
amplifier B 6 - - V
V(BR)G1-SS gate1-source breakdown voltage VGS =VDS =0V; IG1-S =10mA 6 - 10 V
V(BR)G2-SS gate2-source breakdown voltage VGS =VDS =0V; IG2-S =10mA 6 - 10 V
VF(S-G1) forward source-gate1 voltage VG2-S =VDS =0V; IS-G1=10 mA 0.5 - 1.5 V
VF(S-G2) forward source-gate2 voltage VG1-S =VDS =0V; IS-G2=10 mA 0.5 - 1.5 V
VG1-S(th) gate1-source threshold voltage VDS =5V; VG2-S =4V; ID =100A 0.3 - 1.0 V
VG2-S(th) gate2-source threshold voltage VDS =5V; VG1-S =5V; ID =100A 0.4 - 1.0 V
IDSX drain-source current VG2-S =4V; VDS =5V; RG1 =68k
amplifier A [1] 13 - 23 mA
amplifier B [2] 9- 19 mA
NXP Semiconductors BF1207
Dual N-channel dual gate MOSFET
[1] RG1 connects gate1 (A) to VGG =5 V (see Figure3).
[2] RG1 connects gate1 (B) to VGG=0 V (see Figure3).
IG1-S gate1 cut-off current VG2-S =VDS(A) =0V
amplifier A; VG1-S(A) =5 V; VDS(B) =0V - - 50 nA
amplifier B; VG1-S(A) =0 V; ID(B) =0A - - 50 nA
IG2-S gate2 cut-off current VG2-S =4V; VG1-S =VDS(A) =VDS(B) =0V; - - 20 nA
Table 7. Static characteristics …continued =25 C.
NXP Semiconductors BF1207
Dual N-channel dual gate MOSFET
8. Dynamic characteristics
8.1 Dynamic characteristics for amplifier A
[1] For the MOSFET not in use: VG1-S(B) =0V; VDS(B) =0V.
[2] Measured in Figure 29 test circuit.
Table 8. Dynamic characteristics for amplifier A
Common source; Tamb =25 C; VG2-S =4V; VDS =5V; ID =18mA.[1]
yfs forward transfer admittance Tj =25 C25 30 40 mS
Ciss(G1) input capacitance at gate1 f= 100 MHz - 2.2 2.7 pF
Ciss(G2) input capacitance at gate2 f=1 MHz - 3.5 - pF
Coss output capacitance f= 100 MHz - 0.9 - pF
Crss reverse transfer capacitance f= 100 MHz - 20 - fF
Gtr power gain BS =BS(opt); BL =BL(opt)= 200 MHz; GS =2mS; GL= 0.5 mS 30 34 38 dB= 400 MHz; GS =2mS; GL=1 mS 26 30 34 dB= 800 MHz; GS =3.3 mS; GL=1 mS 21 25 29 dB noise figure f=11 MHz; GS =20mS; BS =0 S - 3.0 - dB= 400 MHz; YS =YS(opt) -1.3 - dB= 800 MHz; YS =YS(opt) -1.4 - dB
Xmod cross-modulation input level for k=1 %; fw =50MHz;
funw =60MHz
[2]0 dB AGC 90 - - dBV10 dB AGC - 90 - dBV20 dB AGC - 99 - dBV40 dB AGC 100 105 - dBV
NXP Semiconductors BF1207
Dual N-channel dual gate MOSFET
8.1.1 Graphs for amplifier A
NXP Semiconductors BF1207
Dual N-channel dual gate MOSFET
NXP Semiconductors BF1207
Dual N-channel dual gate MOSFET
NXP Semiconductors BF1207
Dual N-channel dual gate MOSFET
NXP Semiconductors BF1207
Dual N-channel dual gate MOSFET
8.1.2 Scattering parameters for amplifier A Table 9. Scattering parameters for amplifier A
VDS(A) =5 V; VG2-S =4V; ID(A) =18mA; VDS(B) =0V; VG1-S(B) =0V; Tamb = 25 C; typical values. 0.987 4.169 2.87 175.5 0.0008 83.82 0.992 1.42
100 0.983 8.109 2.95 171.14 0.0015 82.08 0.992 2.86
200 0.976 15.97 2.93 162.44 0.0028 77.50 0.990 5.66
300 0.966 23.844 2.89 153.77 0.0041 73.45 0.989 8.49
400 0.952 31.575 2.84 145.23 0.0053 69.42 0.986 11.28
500 0.935 35.225 2.78 136.82 0.0063 65.72 0.984 14.03
600 0.917 46.678 2.72 128.50 0.0072 61.48 0.981 16.80
700 0.898 54.094 2.65 120.44 0.0079 58.05 0.977 19.55
800 0.876 61.205 2.57 112.33 0.0084 52.74 0.974 22.32
900 0.852 68.299 2.49 104.32 0.0089 48.61 0.970 25.10
1000 0.826 75.321 2.41 96.42 0.0091 43.86 0.967 27.88

Partno	Mfg	Dc	Qty	Available	Descript
BF1207	NXP	N/a	27000	avai	Dual N-channel dual-gate MOSFET