Home ›  B › B16 > BF1107,MOSFET N-channel switching transistor

BF1107 Fast Delivery,Good Price
Part Number:

If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email

Partno	Mfg	Dc	Qty	Available	Descript
BF1107	NXP	N/a	3000	avai	MOSFET N-channel switching transistor

BF1107 ,MOSFET N-channel switching transistorLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
BF1108 ,Silicon RF switchesLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL PARAMETER MIN ..
BF1108R ,Silicon RF switches
BF1108R ,Silicon RF switches
BF115 ,Conductor Products, Inc. - Electrical characterlitics
BF1201R ,N-channel dual-gate MOSFETapplications with(SOT143R).3 to 9 V supply voltage, such asdigital and analogue televisiontuners an ..
BR24L08NUX-WTR , High Reliability Series EEPROMs I2C BUS
BR24L08-W , High Reliability Series EEPROMs I2C BUS
BR24L16FVM-WTR , High Reliability Series EEPROMs I2C BUS
BR24L16FVT-WE2 , High Reliability Series EEPROMs I2C BUS
BR24L16FV-W , I2C BUS 16Kbit (2,048 x 8bit) EEPROM
BR24L16-W , High Reliability Series EEPROMs I2C BUS

---

BF1107
MOSFET N-channel switching transistor
Product profile1.1 General description
The BF1107 is a depletion type field-effect transistor in a SOT23 package. The low loss
and high isolation capabilities of this MOSFET provide excellent RF switching functions.
Integrated diodes between gate and source and between gate and drain protect against
excessive input voltage surges. Drain and source are interchangeable.
1.2 Features Currentless RF switch
1.3 Applications Various RF switching applications such as: Passive loop through for VCR tuner Transceiver switching
1.4 Quick reference data
BF1107
N-channel single gate MOSFET
Rev. 04 — 9 January 2007 Product data sheet
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Table 1. Quick reference data
Lins(on) on-state insertion loss VSG =VDG =0V;=50 MHzto 860 MHz =RL =50Ω - - 2.5 dB =RL =75Ω - - 3.5 dB
ISLoff off-state isolation VSG =VDG =5V;=50 MHzto 860 MHz =RL =50Ω 30 --dB =RL =75Ω 30 --dB
RDSon drain-source on-state
resistance
VGS =0V; ID=1 mA - 12 20 Ω
VGS(p) gate-source pinch-off
voltage
VDS =1V; ID =20 μA- −3 −4.5 V
NXP Semiconductors BF1107
N-channel single gate MOSFET Pinning information
[1] Drain and source are interchangeable Ordering information Marking Limiting values
Table 2. Discrete pinning drain [1] source [1] gate
sym120
Table 3. Ordering information
BF1107 - plastic surface-mounted package; 3 leads SOT23
Table 4. Marking
BF1107 S3p
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage - 3 V
VSD source-drain voltage - 3 V
VDG drain-gate voltage - 7 V
VSG source-gate voltage - 7 V drain current - 10 mA
Tstg storage temperature −65 +150 °C junction temperature - 150 °C
NXP Semiconductors BF1107
N-channel single gate MOSFET Thermal characteristics
[1] Soldering point of the gate lead. Static characteristics Dynamic characteristics
Table 6. Thermal characteristics
Rth(j-sp) thermal resistance from junction
to solder point
[1] 260 K/W
Table 7. Static characteristics =25 °C.
V(BR)GSS gate-source breakdown voltage VDS =0V; IGS= 0.1 mA 7 - - V
VGS(p) gate-source pinch-off voltage VDS =1V; ID =20 μA- −3 −4.5 V
IDSX drain cut-off current VGS=−5 V; VDS =2V - - 10 μA
IGSS gate leakage current VGS=−5 V; VDS=0V - - 100 nA
Table 8. Dynamic characteristics
Common gate; Tamb =25 °C.
Lins(on) on-state insertion loss VSG =VDG=0 V; f=50 MHzto 860 MHz =RL =50Ω - - 2.5 dB =RL =75Ω - - 3.5 dB
ISLoff off-state isolation VSG =VDG=5 V; f=50 MHzto 860 MHz =RL =50Ω 30 - - dB =RL =75Ω 30 - - dB
RDSon drain-source on-state
resistance
VGS =0V; ID=1 mA - 12 20 Ω
Cig input capacitance at gate f=1 MHz
VSG =VDG=5V - 0.9 - pF
VSG =VDG=0V - 1.5 2 pF
Cog output capacitance at gate f=1 MHz
VSG =VDG=5V - 0.9 - pF
VSG =VDG=0V - 1.5 2 pF
NXP Semiconductors BF1107
N-channel single gate MOSFET
NXP Semiconductors BF1107
N-channel single gate MOSFET Package outline
Fig 4. Package outline SOT23
Plastic surface-mounted package; 3 leads SOT23
NXP Semiconductors BF1107
N-channel single gate MOSFET
10. Abbreviations
11. Revision history
Table 9. Abbreviations
MOSFET Metal-Oxide Semiconductor Field-Effect Transistor Radio Frequency
VCR Videocassette Recorder
Table 10. Revision history
BF1107_4 20070109 Product data sheet - BF1107_1107W_3
Modifications: • The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Symbol notation has been adapted to comply with the current guidelines of NXP
Semiconductors. Product type BF1107W has been removed from this data sheet.
BF1107_1107W_3
(9397 750 05776)
19990514 Product data sheet - BF1107_2
BF1107_2
(9397 750 03969)
19980622 Product data sheet - BF1107_N_1
BF1107_N_1
(9397 750 03695)
19980407 Preliminary data sheet - -

TEL:86-533-2716050      FAX:86-533-2716790     ©2020 IC PHOENIX CO.,LIMITED