BF1102R ,N-channel dual-gate MOSFETapplications1 gate 1 (1) gate 1 (1) Superior cross-modulation performance during AGC2 gate 2 (1 an ..
BF1105 ,N-channel dual-gate MOSFET
BF1105R ,N-channel dual-gate MOSFETFEATURES PINNING Short channel transistor with high PIN DESCRIPTIONhandbook, 2 columns 3 4forward ..
BF1105WR ,N-channel dual-gate MOSFET
BF1105WR ,N-channel dual-gate MOSFETapplications with 5 V supply voltage, such as television tuners and professional communications equ ..
BF1107 ,MOSFET N-channel switching transistorLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
BR24L08FV-W , 1024×8 bit electrically erasable PROM
BR24L08NUX-WTR , High Reliability Series EEPROMs I2C BUS
BR24L08-W , High Reliability Series EEPROMs I2C BUS
BR24L16FVM-WTR , High Reliability Series EEPROMs I2C BUS
BR24L16FVT-WE2 , High Reliability Series EEPROMs I2C BUS
BR24L16FV-W , I2C BUS 16Kbit (2,048 x 8bit) EEPROM
BF1102-BF1102R
N-channel dual-gate MOSFET
NXP Semiconductors Product specification
Dual N-channel dual gate MOS-FETs BF1102; BF1102R
FEATURES Two low noise gain controlled amplifiers in a single
package Specially designed for 5 V applications Superior cross-modulation performance during AGC High forward transfer admittance High forward transfer admittance to input capacitance
ratio.
APPLICATIONSGain controlled low noise amplifier for VHF and UHF
applications such as television tuners and professional
communications equipment.
DESCRIPTIONThe BF1102 and BF1102R are both two equal dual gate
MOS-FETs which have a shared source pin and a shared
gate 2 pin. Both devices have interconnected source and
substrate; an internal bias circuit enables DC stabilization
and a very good cross-modulation performance at 5V
supply voltage; integrated diodes between the gates and
source protect against excessive input voltage surges.
Both devices have a SOT363 micro-miniature plastic
package.
QUICK REFERENCE DATA
Note Ts is the temperature at the soldering point of the source lead.
NXP Semiconductors Product specification
Dual N-channel dual gate MOS-FETs BF1102; BF1102R
NXP Semiconductors Product specification
Dual N-channel dual gate MOS-FETs BF1102; BF1102R
STATIC CHARACTERISTICS =25 C unless otherwise specified.
Note RG1 connects gate 1 to VGG =5V.
DYNAMIC CHARACTERISTICSCommon source; Tamb =25 C; VG2-S =4V; VDS =5V; ID=15 mA; unless otherwise specified.
Notes Not used MOS-FET: VG1-S =0; VDS =0. Gate 2 capacitance of both MOS-FETs. Measured in test circuit of Fig.20.
NXP Semiconductors Product specification
Dual N-channel dual gate MOS-FETs BF1102; BF1102R
NXP Semiconductors Product specification
Dual N-channel dual gate MOS-FETs BF1102; BF1102R
NXP Semiconductors Product specification
Dual N-channel dual gate MOS-FETs BF1102; BF1102R
