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BF1012,mfg:SIEMENS, Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network
Partno |
Mfg |
Dc |
Qty |
Available | Descript |
BF1012 |
SIEMENS |
N/a |
5 |
|
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
BF1012 |
PHILIPS|Philips |
N/a |
10200 |
|
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
BF1012 |
INFINEON|Infineon |
N/a |
9000 |
|
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
BF1012 E6327 INFINEON
BF1012E6327 INFINEON
BF1012 , Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network
BF1012S ,Silicon N-Channel MOSFET TetrodeBF1012SSilicon N-Channel MOSFET Tetrode3