Partno |
Mfg |
Dc |
Qty |
Available | Descript |
BF1005SRE6327 |
INFINEON|Infineon |
N/a |
2890 |
|
|
BF1009 ,Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network
BF1009 ,Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network
BF1009S ,Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network)BF1009S...Silicon N_Channel MOSFET Tetrode• For low noise, high gain controlled input stage up to ..
BF1012 , Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network
BF1012 , Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network
BR24L02FJ-WE2 , High Reliability Series EEPROMs I2C BUS
BR24L02FV-W , 256×8 bit electrically erasable PROM
BR24L02-W , High Reliability Series EEPROMs I2C BUS