BDX54 ,PNP Epitaxial Silicon TransistorApplications Power Darlington TR Complement to BDX53, BDX53A, BDX53B and BDX53C respectivelyTO-22 ..
BDX54ATU ,NPN Epitaxial Silicon TransistorApplications Power Darlington TR Complement to BDX53, BDX53A, BDX53B and BDX53C respectivelyTO-22 ..
BDX54B ,PNP Epitaxial Silicon TransistorBDX53B / BDX53CBDX54B / BDX54C®COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS■ STMicroelectroni ..
BDX54BTU ,NPN Epitaxial Silicon TransistorBDX54/A/B/CBDX54/A/B/CHammer Drivers, Audio Amplifiers
BDX54C ,PNP Epitaxial Silicon TransistorBDX54/A/B/CBDX54/A/B/CHammer Drivers, Audio Amplifiers
BDX54C. ,PNP Epitaxial Silicon TransistorAPPLICATIONS ■ AUDIO AMPLIFIERS ■ LINEAR AND SWI ..
BR210 , MINI SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
BR211-140 ,Breakover diodes
BR211-140 ,Breakover diodes
BR211-160 ,Breakover diodes
BR211-200 ,Breakover diodes
BR211-200 ,Breakover diodes
BDX54
PNP Epitaxial Silicon Transistor
BDX54/A/B/C BDX54/A/B/C Hammer Drivers, Audio Amplifiers Applications Power Liner and Switching Applications Power Darlington TR Complement to BDX53, BDX53A, BDX53B and BDX53C respectively TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage : BDX54 - 45 V CBO : BDX54A - 60 V : BDX54B - 80 V : BDX54C - 100 V V Collector-Emitter Voltage : BDX54 - 45 V CEO : BDX54A - 60 V : BDX54B - 80 V : BDX54C - 100 V V Emitter-Base Voltage - 5 V EBO I Collector Current (DC) - 8 A C I *Collector Current (Pulse) - 12 A CP I Base Current - 0.2 A B P Collector Dissipation (T =25°C) 60 W C C T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units V (sus) * Collector-Emitter Sustaining Voltage CEO : BDX54 I = - 100mA, I = 0 - 45 V C B : BDX54A - 60 V : BDX54B - 80 V : BDX54C - 100 V I Collector Cut-off Current : BDX54 V = - 45V, I = 0 - 200 μA CBO CB E : BDX54A V = - 60V, I = 0 - 200 μA CB E : BDX54B V = - 80V, I = 0 - 200 μA CB E : BDX54C V = - 100V, I = 0 - 200 μA CB E I Collector Cut-off Current : BDX54 V = - 22V, I = 0 - 500 μA CEO CE B : BDX54A V = - 30V, I = 0 - 500 μA CE B : BDX54B V = - 40V, I = 0 - 500 μA CE B : BDX54C V = - 50V, I = 0 - 500 μA CE B I Emitter Cut-off Current V = - 5V, I = 0 - 2 mA EBO EB C h * DC Current Gain V = - 3V, I = - 3A 750 FE CE C V (sat) * Collector-Emitter Saturation Voltage I = - 3A, I = - 12mA - 2 V CE C B V (sat) * Base-Emitter Saturation Voltage I = - 3A, I = - 12mA - 2.5 V BE C B V * Parallel Diode Forward Voltage I = - 3A - 1.8 - 2.5 V F F I = - 8A - 2.5 V F * Pulse Test: PW=300μs, duty Cycle =1.5% Pulsed ©2000 Fairchild Semiconductor International Rev. A, February 2000
