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BDW93C-BDW93C.-BDW94C Fast Delivery,Good Price
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BDW93CSTN/a418avaiNPN Epitaxial Silicon Transistor
BDW93C. |BDW93CSTN/a150avaiNPN Epitaxial Silicon Transistor
BDW94CST,STN/a10000avaiPNP Epitaxial Silicon Transistor
BDW94CSTMN/a10000avaiPNP Epitaxial Silicon Transistor


BDW94C ,PNP Epitaxial Silicon TransistorBDW93CBDW94B/BDW94C®COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS■ STMicroelectronics PREFERRE ..
BDW94C ,PNP Epitaxial Silicon TransistorBDW93CBDW94B/BDW94C®COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS■ STMicroelectronics PREFERRE ..
BDW94CFP ,COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORSAPPLICATIONS ■ LINEAR AND SWITCHING INDUSTRIALT0 ..
BDX33B ,NPN Epitaxial Silicon Transistor3BDX33B BDX33C BDX34B BDX34C1.00.7D = 0.50.50.30.20.20.1P(pk)0.050.1R (t) = r(t) RθJC θJCR = 1.92 ° ..
BDX33C ,NPN Epitaxial Silicon TransistorELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)CCharacteristic Symbol Min Max UnitOFF ..
BDX33CG , Darlington Complementary Silicon Power Transistors
BR1101F , Single Color Right Angle Type (3.0 X 2.0 mm)
BR1101F , Single Color Right Angle Type (3.0 X 2.0 mm)
BR1102W , Outer Dimension 3.0 x 1.5 x 1.5mm
BR210 , MINI SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
BR211-140 ,Breakover diodes
BR211-140 ,Breakover diodes


BDW93C-BDW93C.-BDW94C
NPN Epitaxial Silicon Transistor
BDW93C
BDW94B/BDW94C

COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS STMicroelectronics PREFERRED
SALESTYPES COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION

The BDW93C is a silicon Epitaxial-Base NPN
power transistor in monolithic Darlington
configuration mounted in Jedec TO-220 plastic
package. It is intented for use in power linear and
switching applications.
The complementary PNP type is BDW94C.
Also BDW94B is a PNP type.
October 1999
ABSOLUTE MAXIMUM RATINGS

For PNP types voltage and current values are negative.
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THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25
o C unless otherwise specified)
∗ Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
BDW93C/BDW94B/BDW94C

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Safe Operating Area
Collector Emitter Saturation Voltage (NPN types)
Collector Emitter Saturation Voltage (NPN types)
DC Current Gain (NPN types)
DC Transconductance (NPN types)
Collector Emitter Saturation Voltage (PNP types)
BDW93C/BDW94B/BDW94C

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Saturated Switching Characteristics (NPN types)
Collector Emitter Saturation Voltage (PNP types)
Saturated Switching Characteristics (PNP types)
DC Current Gain (PNP types)
DC Transconductance (PNP types)
BDW93C/BDW94B/BDW94C

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BDW93C/BDW94B/BDW94C
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. consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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BDW93C/BDW94B/BDW94C

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