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BDP952INFN/a301avaiGeneral Purpose Transistors
BDP954INFN/a2785avaiGeneral Purpose Transistors


BDP954 ,General Purpose TransistorsCharacteristics at T = 25°C, unless otherwise specified.AParameter Symbol Values Unitmin. typ. max. ..
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BDP952-BDP954
General Purpose Transistors
BDP952...BDP956
PNP Silicon AF Power Transistors
For AF driver and output stages High current gain Low collector-emitter saturation voltage Complementary types: BDP951...BDP955 (NPN)
Maximum Ratings
Thermal Resistance
For calculation of RthJA please refer to Application Note Thermal Resistance
BDP952...BDP956
Electrical Characteristics at T
A = 25°C, unless otherwise specified.
DC Characteristics
AC Characteristics
BDP952...BDP956
Total power dissipation Ptot = f (TS)

0.4
0.8
1.2
1.6
2.4
3.2
tot
Permissible Pulse Load R
thJS = f (tp)
10 0
-2 10
-1 10 10 10 10 10
thJS
Permissible Pulse Load
totmax / PtotDC = f (tp) 0 10 10 10 10
totmax
/ P
totDC
DC current gain h
FE = f (IC) CE = 2V 4 10 10 10
BDP952...BDP956
Collector cutoff current I
CBO = f (TA) CB = 45V
-1 10 10 10 10 10 10 10
ICBO
Collector-emitter saturation voltage
C = f (VCEsat), hFE = 10
0.010 10 10 10 10
Collector current I
C = f (VBE) CE = 2V
0.010 10 10 10 10
Base-emitter saturation voltage
C = f (VBEsat), hFE = 10
0.010 10 10 10 10
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