| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| BD201 |
TOS|TOSHIBA |
N/a |
1560 |
 |
EPITAXIAL BASE SILICON NPN AND PNP VERSAWATT TRANSISTORS |
BD-201005-553 COILCRAF
bd2014
BD201 , EPITAXIAL BASE SILICON NPN AND PNP VERSAWATT TRANSISTORS
BD201F , isc Silicon NPN Power Transistor
BD201F , isc Silicon NPN Power Transistor
BD202 , EPITAXIAL BASE SILICON NPN AND PNP VERSAWATT TRANSISTORS
BD204 , EPITAXIAL BASE SILICON NPN AND PNP VERSAWATT TRANSISTORS
BN1A3Q ,Compound transistorDATA SHEETCOMPOUND TRANSISTORBN1A3Qon-chip resistor PNP silicon epitaxial transistorFor mid-speed ..
BN1A4M ,The BN1A4M is designed for use in medium speed switching circuit.ELECTRICAL CHARACTERISTICS (Ta = 25 °C)
CHARACTERISTIC MIN. TYP. MAX. UNIT
Input Resistance 7.0 ..
BN1A4P ,PNP SILICON TRANSISTORT PNP SILICON TRANSISTOR
BN1A4P
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DESCRIPTION The BN1A4P is designed for use i ..
