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BD179STN/a9000avaiLeaded Power Transistor General Purpose
BD179. |BD179STN/a2890avaiLeaded Power Transistor General Purpose


BD179 ,Leaded Power Transistor General PurposeBD179®NPN SILICON TRANSISTOR■ STMicroelectronics PREFERREDSALESTYPE ■ NPN TRANSISTORAPPLICATION ..
BD179 ,Leaded Power Transistor General Purpose
BD179 ,Leaded Power Transistor General PurposeELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)CÎÎ CharacteristicÎÎÎÎÎÎ SymbolÎÎÎÎ Min ..
BD179. ,Leaded Power Transistor General PurposeBD179®NPN SILICON TRANSISTOR■ STMicroelectronics PREFERREDSALESTYPE ■ NPN TRANSISTORAPPLICATION ..
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BD179-BD179.
Leaded Power Transistor General Purpose
BD179
NPN SILICON TRANSISTOR STMicroelectronics PREFERRED
SALESTYPE NPN TRANSISTOR
APPLICATION
GENERAL PURPOSE SWITCHING
DESCRIPTION

The BD179 is a silicon epitaxial planar NPN
transistor in Jedec SOT-32 plastic package,
designed for medium power linear and switching
applications.
December 2000
ABSOLUTE MAXIMUM RATINGS

1/5
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25
o C unless otherwise specified)
* Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
Safe Operating Area Derating Curves
BD179

2/5
DC Current Gain
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
BD179

3/5
BD179
4/5
. consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2000 STMicroelectronics – Printed in Italy – All Rights Reserved
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BD179

5/5
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