BCW66GLT1 ,General Purpose NPN TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
BCW66GLT1 ,General Purpose NPN TransistorTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitTotal Device Dissipation FRï 5 Board P 225 mW ..
BCW66H ,SMD Small Signal Transistor NPN High CurrentCharacteristics at T = 25°C, unless otherwise specified.AParameter Symbol Values Unitmin. typ. max. ..
BCW67A ,PNP Silicon AF Transistors (For general AF applications High current gain)
BCW67A ,PNP Silicon AF Transistors (For general AF applications High current gain)
BCW67B ,SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS
BLM21PG220SN1D , EMIFIL (Inductor type) Chip Ferrite Bead
BLM21PG220SN1D , EMIFIL (Inductor type) Chip Ferrite Bead
BLM21PG221SH1D , For Automotive Chip Ferrite Beads for Automotive
BLM21PG221SN1D , Chip Ferrite Bead
BLM21PG221SN1D , Chip Ferrite Bead
BLM21PG600SN1D , EMIFILr (Inductor type) Chip Ferrite Bead
BCW66GLT1
General Purpose NPN Transistor
BCW66GLT1G,
SBCW66GLT1G
General Purpose T ransistor
NPN Silicon
Features AECïQ101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements These Devices are PbïFree, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
CollectorïEmitter Voltage VCEO 45 Vdc
CollectorïBase Voltage VCBO 75 Vdc
EmitterïBase Voltage VEBO 5.0 Vdc
Collector Current ï Continuous IC 800 mAdc
Collector Current ï Pulsed IC 1200 mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to
stresses above the Recommended Operating Conditions may affect device
reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FRï5 Board
(Note 1), TA = 25°C
Derate above 25°C 225
mW/°C
Thermal Resistance,
JunctionïtoïAmbient RJA 556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
mW/°C
Thermal Resistance,
JunctionïtoïAmbient RJA 417 °C/W
Junction and Storage Temperature TJ, Tstg ï55 to +150 °C FRï5 = 1.0 0.75 0.062 in. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
*For additional information on our PbïFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
SOTï23
(TOï236)
CASE 318ï08
STYLE 6
http://
MARKING DIAGRAM
COLLECTOR
BASE
EMITTER = Specific Device Code = Date Code* = PbïFree Package
Device Package Shipping
ORDERING INFORMATION
BCW66GLT1G SOTï23
(PbïFree)
3,000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
EG M
(*Note: Microdot may be in either location)
SBCW66GLT1G SOTï23
(PbïFree)
3,000/Tape & Reel
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
BCW66GLT3G SOTï23
(PbïFree)
10,000/Tape & Reel
