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Partno	Mfg	Dc	Qty	Available	Descript
BCV62	NXP	N/a	12000	avai	PNP Silicon Double Transistor
BCV62A	NXP	N/a	2570	avai	PNP general purpose double transistor
BCV62B	NXP	N/a	2462	avai	PNP general-purpose double transistors

BCV62 ,PNP Silicon Double TransistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL PARAMETER CON ..
BCV62 ,PNP Silicon Double TransistorFeatures and benefits Low current (max. 100 mA) Low voltage (max. 30 V) Matched pairs AEC-Q101 ..
BCV62 ,PNP Silicon Double TransistorDISCRETE SEMICONDUCTORSDATA SHEETM3D071BCV62PNP general purposedouble transistor1999 Apr 08Product ..
BCV62A ,PNP general purpose double transistor
BCV62A ,PNP general purpose double transistorLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
BCV62B ,PNP general-purpose double transistorsGeneral descriptionPNP general-purpose double transistors in a small SOT143B Surface-Mounted Device ..
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BCV62-BCV62A-BCV62B
PNP general-purpose double transistors
1. Product profile
1.1 General description
PNP general-purpose double transistors in a small SOT143B Surface-Mounted
Device (SMD) plastic package.
1.2 Features and benefits Low current (max. 100 mA) Low voltage (max.30V) Matched pairs AEC-Q101 qualified Small SMD plastic package
1.3 Applications Applications with working point independent of temperature Current mirrors
1.4 Quick reference data
BCV62
PNP general-purpose double transistors
Rev. 4 — 26 July 2010 Product data sheet
Table 1. Product overview
BCV62 SOT143B - BCV61
BCV62A BCV61A
BCV62B BCV61B
BCV62C BCV61C
Table 2. Quick reference data
Per transistor
VCEO collector-emitter voltage open base - - −30 V collector current - - −100 mA
Transistor TR1
hFE DC current gain VCE= −5V; IC= −100μA 100 - -
VCE= −5V; IC=−2 mA 100 - 800
NXP Semiconductors BCV62
PNP general-purpose double transistors
2. Pinning information
3. Ordering information
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Transistor TR2
hFE DC current gain VCE= −5V; IC= −2mA
BCV62 100 - 800
BCV62A 100 - 250
BCV62B 220 - 475
BCV62C 420 - 800
Table 2. Quick reference data …continued
Table 3. Pinning collector TR2;
base TR1 and TR2 collector TR1
3emitter TR1
4emitter TR2 214
Table 4. Ordering information
BCV62 - plastic surface-mounted package; 4 leads SOT143B
BCV62A
BCV62B
BCV62C
Table 5. Marking codes
BCV62 3M*
BCV62A 3J*
BCV62B 3K*
BCV62C 3L*
NXP Semiconductors BCV62
PNP general-purpose double transistors
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB).
6. Thermal characteristics
[1] Device mounted on an FR4 PCB.
7. Characteristics
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Per transistor
VCBO collector-base voltage open emitter - −30 V
VCEO collector-emitter voltage open base - −30 V
VEBS emitter-base voltage VCE =0V - −6V collector current - −100 mA
ICM peak collector current - −200 mA
IBM peak base current - −200 mA
Per device
Ptot total power dissipation Tamb≤25°C [1] -250 mW junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
Table 7. Thermal characteristics
Rth(j-a) thermal resistance from junction
to ambient
in free air [1]- - 500 K/W
Table 8. Characteristics =25 °C unless otherwise specified.
Transistor TR1
ICBO collector-base
cut-off current
VCB= −30 V; IE =0A - - −15 nA
VCB= −30 V; IE =0A; = 150°C −5 μA
IEBO emitter-base
cut-off current
VEB= −5V; IC =0A - - −100 nA
hFE DC current gain VCE= −5V; = −100μA
100 - -
VCE= −5V; IC=−2 mA 100 - 800
VCEsat collector-emitter
saturation voltage= −10 mA; = −0.5 mA −75 −300 mV= −100 mA; = −5mA −250 −650 mV
NXP Semiconductors BCV62
PNP general-purpose double transistors
[1] VBEsat decreases by about 1.7 mV/K with increasing temperature.
[2] VBE decreases by about 2 mV/K with increasing temperature.
[3] Device, without emitter resistors, mounted on an FR4 PCB.
VBEsat base-emitter
saturation voltage= −10 mA; = −0.5 mA
[1]- −700- mV= −100 mA; = −5mA
[1]- −850- mV
VBE base-emitter voltage IC= −2mA; VCE= −5V [2] −600 −650 −750 mV= −10 mA; VCE= −5V [2] -- −820 mV transition frequency VCE= −5V; = −10 mA;
f=100MHz
100 - - MHz collector capacitance VCB= −10V; =ie =0A
-4.5 -pF noise figure VCE= −5V; = −200 μA; RS =2kΩ; =1 kHz; B= 200Hz
--10 dB
Transistor TR2
VEBS emitter-base voltage VCB =0V; IE= −250 mA - - −1.5 V
VCB =0V; IE= −10μA −400 --mV
hFE DC current gain VCE= −5V; IC= −2mA
BCV62 100 - 800
BCV62A 100 - 250
BCV62B 220 - 475
BCV62C 420 - 800
Transistors TR1 and TR2
IC1/IE2 current matching IE2= −0.5 mA;
VCE1= −5V;
Tamb≤25°C 0.7 - 1.3
Tamb≤ 150°C 0.7 - 1.3
IE2 emitter current2 VCE1= −5V [3] -- −5mA
Table 8. Characteristics …continued =25 °C unless otherwise specified.
NXP Semiconductors BCV62
PNP general-purpose double transistors
NXP Semiconductors BCV62
PNP general-purpose double transistors
NXP Semiconductors BCV62
PNP general-purpose double transistors

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