BCV48 ,Darlington Transistors
BCV48 ,Darlington TransistorsCharacteristicsCollector-emitter breakdown voltage V V(BR)CEOI = 10 mA, I = 0 30 - -BCV28C B60 - ..
BCV48 ,Darlington Transistors
BCV48 ,Darlington Transistors
BCV49 ,Darlington Transistors
BCV49 ,Darlington Transistors
BLM18KG260TN1D , EMIFIL (Inductor type) Chip Ferrite Bead BLM18K Series (0603 Size)
BLM18KG471SN1D , EMIFIL (Inductor type) Chip Ferrite Bead BLM18K Series (0603 Size)
BLM18PG121SN1D , EMIFIL (Inductor type) Chip Ferrite Bead BLM18P Series (0603 Size)
BLM18PG121SN1D , EMIFIL (Inductor type) Chip Ferrite Bead BLM18P Series (0603 Size)
BLM18PG300SN1J , EMIFIL (Inductor type) Chip Ferrite Bead BLM18P Series (0603 Size)
BLM18PG300SN1J , EMIFIL (Inductor type) Chip Ferrite Bead BLM18P Series (0603 Size)
BCV28-BCV48
Darlington Transistors
BCV28, BCV48
PNP Silicon Darlington Transistors For general AF applications High collector current High current gain Complementary types: BCV29, BCV49 (NPN)
Maximum Ratings
Thermal ResistanceFor calculation of RthJA please refer to Application Note Thermal Resistance
BCV28, BCV48
Electrical Characteristics at TA = 25°C, unless otherwise specified.
DC Characteristics
BCV28, BCV48
Electrical Characteristics at TA = 25°C, unless otherwise specified.
DC Characteristics
AC Characteristics
BCV28, BCV48
Collector cutoff current I = f (TA)10
EHP00309T
150CBO100
Total power dissipation Ptot = f(TS)
200
400
600
800
1200
tot
Permissible pulse loadtotmax / PtotDC = f (tp)-501010-4-3-2
totmax
totPDC
Transition frequency fT = f (IC)CE = 5V
EHP003121012f
BCV28, BCV48
Base-emitter saturation voltage10
EHP00314
BEsatV
Collector-emitter saturation voltageC = f (V10
CEsatV
1.510C
Collector-base capacitance CCB = f (VCBO
Emitter-base capacitance CEB = f (VEBO)10
CB0CEB0()
DC current gain hFE = f (IC)CE = 5V
EHP0031631001h
:
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