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BCR555InfineonN/a8068avaiDigital Transistors
BCR555INFN/a417avaiDigital Transistors


BCR555 ,Digital TransistorsBCR555PNP Silicon Digital Transistor 3

BCR555
Digital Transistors
BCR555
PNP Silicon Digital Transistor
Switching circuit, inverter, interface circuit,
driver circuit Built in bias resistor (R1=2.2k, R2=10k
EHA071831B
Maximum Ratings
Thermal Resistance
For calculation of RthJA please refer to Application Note Thermal Resistance
BCR555
Electrical Characteristics at T
A=25°C, unless otherwise specified
DC Characteristics
AC Characteristics
BCR555
DC Current Gain h
FE = f (IC) CE = 5V (common emitter configuration) 3 10 10 10 10 10
Collector-Emitter Saturation Voltage
CEsat = f (IC), hFE = 20
0.010 10 10 10
Input on Voltage V
i(on) = f (IC) CE = 0.3V (common emitter configuration)
10 2
-2 10
-1 10 10 10 10 10
Input off voltage V
i(off) = f (IC) CE = 5V (common emitter configuration)
-2 10
-1 10 10 10
BCR555
Total power dissipation P
tot = f (TS)
50
100
150
200
250
300
400
tot
Permissible Pulse Load
totmax / PtotDC = f (tp)
10 0 10 10 10 10 10
totmax
/ P
totDC
Permissible Pulse Load R
thJS = f (tp)
10 0
-1 10 10 10 10 10
thJS
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