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BCR512INFINEONN/a3000avaiDigital Transistors


BCR512 ,Digital TransistorsBCR512NPN Silicon Digital Transistor 3

BCR512
Digital Transistors
BCR512
NPN Silicon Digital Transistor
Switching circuit, inverter, interface circuit,
driver circuit Built in bias resistor (R1=4.7k, R2=4.7k
EHA071841B
Maximum Ratings
Thermal Resistance
For calculation of RthJA please refer to Application Note Thermal Resistance
BCR512
DC Characteristics
AC Characteristics
BCR512
DC Current Gain h
FE = f (IC) CE = 5V (common emitter configuration) 3 10 10 10 10 10
Collector-Emitter Saturation Voltage
CEsat = f (IC), hFE = 20
0.010 10 10 10
Input on Voltage V
i(on) = f (IC) CE = 0.3V (common emitter configuration)
10 2
-1 10 10 10 10 10
Input off voltage V
i(off) = f (IC) CE = 5V (common emitter configuration)
-2 10
-1 10 10 10
BCR512
Total power dissipation P
tot = f (TS)
50
100
150
200
250
300
400
tot
Permissible Pulse Load
totmax / PtotDC = f (tp)
10 0 10 10 10 10 10
totmax
/ P
totDC
Permissible Pulse Load R
thJS = f (tp)
10 0
-1 10 10 10 10 10
thJS
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