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BCR166TINFINEONN/a4000avaiSingle digital (complex) AF-Transistors in SC75 package


BCR166T ,Single digital (complex) AF-Transistors in SC75 packageBCR166.../SEMB13PNP Silicon Digital Transistor• Switching circuit, inverter, interface circuit, d ..
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BCR166T
Single digital (Built-In Resistor) AF-Transistors in TSFP-3 Package
BCR166.../SEMB13
PNP Silicon Digital Transistor

• Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor (R1 = 4.7kΩ , R2 = 47kΩ )
BCR166/F/L3
BCR166T/W
SEMB13

EHA07183B
EHA07173B2E2B1E1
BCR166.../SEMB13
Maximum Ratings
Thermal Resistance
For calculation of RthJA please refer to Application Note Thermal Resistance
BCR166.../SEMB13
DC Characteristics
AC Characteristics
Pulse test: t < 300µs; D < 2%
BCR166.../SEMB13
DC current gain h
FE = ƒ(IC)CE = 5 V (common emitter configuration)2 10 10 10 10
Collector-emitter saturation voltage
CEsat = ƒ(IC), hFE = 2010 10 10
Input on Voltage Vi
(on) = ƒ(IC)CE = 0.3V (common emitter configuration)
10 2
-1 10 10 10 10
Input off voltage V
i(off) = ƒ(IC)CE = 5V (common emitter configuration)
-3 10
-2 10
-1 10 10 10
BCR166.../SEMB13
Total power dissipation P
tot = ƒ(TS)
BCR166
50
100
150
200
300
tot
Total power dissipation P
tot = ƒ(TS)
BCR166F
50
100
150
200
300
tot
Total power dissipation P
tot = ƒ(TS)
BCR166L3
50
100
150
200
300
tot
Total power dissipation P
tot = ƒ(TS)
BCR166T
50
100
150
200
300
tot
BCR166.../SEMB13
Total power dissipation P
tot = ƒ(TS)
BCR166W
50
100
150
200
300
tot
Total power dissipation P
tot = ƒ(TS)
SEMB13
50
100
150
200
300
tot
Permissible Pulse Load
totmax/PtotDC = ƒ(tp)
BCR1660 10 10 10 10
totmax
totDC
Permissible Pulse Load R
thJS = ƒ(tp)
BCR166
10 0
-1 10 10 10 10 10
thJS
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