BCR133F ,Single digital (Built-In Resistor) AF-Transistors in TSFP-3 PackageBCR133.../SEMH11NPN Silicon Digital Transistor• Switching in circuit, inverter, interface circuit, ..
BCR133F E6327 ,Digital TransistorsBCR133...NPN Silicon Digital Transistor• Switching in circuit, inverter, interface circuit, drive ..
BCR133FE6327 ,Digital TransistorsCharacteristics50 - -Collector-emitter breakdown voltage V V(BR)CEOI = 100 µA, I = 0 C BCollector-b ..
BCR133F-E6327 ,Digital TransistorsCharacteristics at T = 25°C, unless otherwise specifiedAParameter Symbol Values Unitmin. typ. max.D ..
BCR133S ,Digital TransistorsBCR133...NPN Silicon Digital Transistor• Switching in circuit, inverter, interface circuit, drive ..
BCR133T ,Digital TransistorsBCR133...NPN Silicon Digital Transistor• Switching in circuit, inverter, interface circuit, drive ..
BLF542 ,UHF power MOS transistorapplications in the UHF frequencyFig.1 Simplified outline and symbol.range.The transistor is encap ..
BLF542 ,UHF power MOS transistorPIN CONFIGURATION• High power gainhalfpage• Easy power control• Gold metallization• Good thermal st ..
BLF548 ,UHF push-pull power MOS transistorapplications in the UHF frequencyrange.Fig.1 Simplified outline and symbol.The transistor is encap ..
BLF647 ,UHF power LDMOS transistorLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
BLF6G10LS-135R , Power LDMOS transistor
BLF6G10LS-135R , Power LDMOS transistor
BCR133F
Single digital (Built-In Resistor) AF-Transistors in TSFP-3 Package
BCR133.../SEMH11
NPN Silicon Digital Transistor• Switching in circuit, inverter, interface circuit,
drive circuit
• Built in bias resistor (R1 = 10 kΩ, R2 = 10 kΩ)
• For 6-PIN packages: two (galvanic) internal
isolated transistors with good matching
in one package
BCR133/F/L3
BCR133T/W
BCR133S/U
SEMH11EHA07184B
EHA07174B2E2B1E1
BCR133.../SEMH11
Maximum Ratings
Thermal ResistanceFor calculation of RthJA please refer to Application Note Thermal Resistance
BCR133.../SEMH11
DC Characteristics
AC CharacteristicsPulse test: t < 300µs; D < 2%
BCR133.../SEMH11
DC current gain hFE = ƒ(IC)CE = 5 V (common emitter configuration)2 10 10 10 10
Collector-emitter saturation voltageCEsat = ƒ(IC), hFE = 2010 10 10
Input on Voltage Vi(on) = ƒ(IC)CE = 0.3V (common emitter configuration)
10 2
-1 10 10 10 10
Input off voltage Vi(off) = ƒ(IC)CE = 5V (common emitter configuration)
-2 10
-1 10 10 10
BCR133.../SEMH11
Total power dissipation Ptot = ƒ(TS)
BCR133
50
100
150
200
300
tot
Total power dissipation Ptot = ƒ(TS)
BCR133F
50
100
150
200
300
tot
Total power dissipation Ptot = ƒ(TS)
BCR133L3
50
100
150
200
300
tot
Total power dissipation Ptot = ƒ(TS)
BCR133S
50
100
150
200
300
tot
BCR133.../SEMH11
Total power dissipation Ptot = ƒ(TS)
BCR133T
50
100
150
200
300
tot
Total power dissipation Ptot = ƒ(TS)
BCR133U
50
100
150
200
300
tot
Total power dissipation Ptot = ƒ(TS)
BCR133W
50
100
150
200
300
tot
Total power dissipation Ptot = ƒ(TS)
SEMH11
50
100
150
200
300
tot
