IC Phoenix
 
Home ›  BB12 > BCR10PN,Digital Transistors
BCR10PN Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
BCR10PNINFINEONN/a66000avaiDigital Transistors


BCR10PN ,Digital TransistorsCharacteristicsV 50 - - VCollector-emitter breakdown voltage (BR)CEOI = 100 µA, I = 0 C BV 50 - -Co ..
BCR112 ,Digital TransistorsCharacteristics50 - -Collector-emitter breakdown voltage V V(BR)CEOI = 100 µA, I = 0 C BCollector-b ..
BCR112F ,Single digital (Built-In Resistor) AF-Transistors in TSFP-3 PackageCharacteristics50 - -Collector-emitter breakdown voltage V V(BR)CEOI = 100 µA, I = 0 C BCollector-b ..
BCR112F E6327 ,Digital TransistorsBCR112...NPN Silicon Digital Transistor• Switching circuit, inverter, interface circuit, driver c ..
BCR112FE6327 ,Digital TransistorsBCR112...NPN Silicon Digital Transistor• Switching circuit, inverter, interface circuit, driver c ..
BCR112T ,Single digital (complex) AF-Transistors in SC75 packageBCR112...NPN Silicon Digital Transistor• Switching circuit, inverter, interface circuit, driver c ..
BLC8G27LS-160AV ,Power LDMOS transistorapplications in the 2496 MHz to 2690 MHz frequency rangeBLC8G27LS-160AVNXP SemiconductorsPower LDMO ..
BLF175 ,HF/VHF power MOS transistorapplications. ReferThis product is supplied in anti-static packing to prevent damage caused byto th ..
BLF1820-70 ,UHF power LDMOS transistor
BLF1820-90 ,UHF power LDMOS transistor
BLF202 ,HF/VHF power MOS transistor
BLF2043F ,UHF power LDMOS transistor


BCR10PN
Digital Transistors
BCR10PN
NPN/PNP Silicon Digital Transistor Array
Switching circuit, inverter, interface circuit,
driver circuit Two (galvanic) internal isolated NPN/PNP
Transistors in one package Built in bias resistor (R1=10k, R2 =10k)
Tape loading orientation

EHA07193356
Direction of Unreeling
Top ViewMarking on SOT-363 package
(for example W1s)
corresponds to pin 1 of device
EHA0717621E2B1E1R
TR1
TR2
Maximum Ratings
Thermal Resistance
For calculation of RthJA please refer to Application Note Thermal Resistance
BCR10PN
DC Characteristics
AC Characteristics
BCR10PN
NPN Type
DC Current Gain h
FE = f (IC) CE = 5V (common emitter configuration)
10 2 10 10 10 10
Collector-Emitter Saturation Voltage
CEsat = f (IC), hFE = 20 10 10 10
Input on Voltage V
i(on) = f (IC) CE = 0.3V (common emitter configuration)
10
-1 10 10 10 10
Input off voltage V
i(off) = f (IC) CE = 5V (common emitter configuration)
-2 10
-1 10 10 10
BCR10PN
PNP Type
Collector-Emitter Saturation Voltage
CEsat = f (IC), hFE = 20 10 10 10
DC Current Gain h
FE = f (IC) CE = 5V (common emitter configuration)
10 2 10 10 10 10
Input off voltage V
i(off) = f (IC)CE = 5V (common emitter configuration)
-2 10
-1 10 10 10
Input on Voltage V
i(on) = f (IC) CE = 0.3V (common emitter configuration)
10
-1 10 10 10 10
BCR10PN
Total power dissipation P
tot = f (TS)
50
100
150
200
300
tot
Permissible Pulse Load R
thJS = f (tp)
10 0
-1 10 10 10 10 10
thJS
Permissible Pulse Load
totmax / PtotDC = f (tp)
10 0 10 10 10 10
totmax
/ P
totDC
:
www.ic-phoenix.com
.
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED