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Partno	Mfg	Dc	Qty	Available	Descript
BCP72M	INFINEON	N/a	194200	avai	PNP Silicon AF Power Transistor

BCP72M ,PNP Silicon AF Power TransistorBCP 72MPNP Silicon AF Power Transistor4

BCP72M
PNP Silicon AF Power Transistor
BCP 72M
PNP Silicon AF Power Transistor Drain switch for RF power amplifier stages For AF driver and output stages High collector current Low collector-emitter saturation voltage
Maximum Ratings (E1 and E2 connected externaly)
Thermal Resistance
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
BCP 72M
Electrical Characteristics
at TA = 25°C, unless otherwise specified and E1 and E2 connected externaly
DC Characteristics
AC Characteristics
1) Pulse test: t < 300s; D < 2%
BCP 72M
Total power dissipation Ptot = f (TA*;TS)
* Package mounted on epoxy
200
400
600
800
1000
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1400
1600
2000
tot
Permissible Pulse Load RthJS = f (tp)
10 0
-1 10 10 10 10
thJS
Permissible Pulse Load
Ptotmax / PtotDC = f (tp) 0 10 10 10 10
totmax
/ P
totDC
BCP 72M
DC current gain hFE = f (IC)
VCE = 2V4 10 10 10 10
Collector-emitter saturation voltage
IC = f (VCEsat), hFE = 10
0.0010 10 10 10 10
Base-emitter saturation voltage
IC = f (VBEsat), hFE = 10
0.010 10 10 10 10
Collector current IC = f (VBE)
VCE = 2V
0.010 10 10 10 10
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