BCP69T1 ,MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNTMAXIMUM RATINGS (T = 25°C unless otherwise noted)CMARKINGDIAGRAM4Rating Symbol Value Unit1Collector ..
BCP69T1/D ,PNP Silicon Epitaxial Transistor2V, VOLTAGE (VOLTS) h , CURRENT GAINFEC, CAPACITANCE (pF) f , CURRENT GAIN BANDWIDTH PRODUCT (MHz ..
BCP72M ,PNP Silicon AF Power TransistorBCP 72MPNP Silicon AF Power Transistor4
BCP69-BCP69T1
MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT
BCP69T1
Preferred Device PNP Silicon
Epitaxial Transistor
This PNP Silicon Epitaxial Transistor is designed for use in low
voltage, high current applications. The device is housed in the
SOT−223−4 package, which is designed for medium power surface
mount applications. High Current: IC = −1.0 A The SOT−223−4 Package can be soldered using wave or reflow. SOT−223−4 package ensures level mounting, resulting in improved
thermal conduction, and allows visual inspection of soldered joints.
The formed leads absorb thermal stress during soldering, eliminating
the possibility of damage to the die. Available in 12 mm Tape and Reel
Use BCP69T1 to order the 7 inch/1000 unit reel.
Use BCP69T3 to order the 13 inch/4000 unit reel. NPN Complement is BCP68 Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
THERMAL CHARACTERISTICS Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.
x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
MEDIUM POWER
PNP SILICON
HIGH CURRENT
TRANSISTOR
SURFACE MOUNT2
COLLECTOR 2,4
BASE
EMITTER 3
http://
SOT−223−4 (TO−261)
CASE 318EStyle 1
ORDERING INFORMATION = Specific Device Code
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MARKING
DIAGRAM
