| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| BCP53-10T1G |
ON|ON Semiconductor |
N/a |
10000 |
 |
PNP Silicon Epitaxial Transistors MEDIUM POWER HIGH CURRENT SURFACE MOUNT |
BCP53-10T1G ON ON
BCP53-16 ON,Characteristics at T = 25°C, unless otherwise specified.AParameter Symbol Values Unitmin. typ. max.DC
BCP53-16 ST,BCP52-16BCP53-16®SMALL SIGNAL PNP TRANSISTORSPRELIMINARY DATAType MarkingBCP52-16 BCP5216BCP53-16 BCP5316■ SILICON EPITAXIAL PLANAR PNP MEDIUMVOLTAGE ..
BCP53-16 PHI,DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D087BCP51; BCP52; BCP53PNP medium power transistorsProduct specification 2003 Feb 06Supersedes data o ..
BCP53-16 PHILIPS,FEATURES PINNING• High collector currentPIN DESCRIPTION• 1.3 W power dissipation.1 base2, 4 collector
BCP53-10T1G , PNP Silicon Epitaxial Transistors MEDIUM POWER HIGH CURRENT SURFACE MOUNT
BCP53-16 ,PNP Silicon AF Transistors (For AF driver and output stages High collector current)General descriptionPNP medium power transistor series in Surface-Mounted Device (SMD) plastic packa ..
BCP53-16T1 ,PNP Silicon Epitaxial Transistors• High Current: 1.5 Amps• NPN Complement is BCP56MEDIUM POWER• The SOT-223 Package can be soldered ..
BCP53-16T1G , PNP Silicon Epitaxial Transistors MEDIUM POWER HIGH CURRENT SURFACE MOUNT
BCP53T1 ,MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNTELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristics Symbol Min Typ Max Uni ..
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BL8550-33CB , 400mA Low Dropout Voltage Regulator
