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BCP51MINFN/a1000avaiPNP Silicon AF Transistor (For AF driver and output stages High collector current)


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BCP51M
PNP Silicon AF Transistor for AF driv...
PNP Silicon AF Transistor
• For AF driver and output stages
• High collector current
• Low collector-emitter saturation voltage
• Complementary types: BCP 54M...BCP 56M(NPN)
Maximum Ratings
Thermal Resistance
BCP 51M ... BCP 53M
Electrical Characteristics at TA = 25°C, unless otherwise specified.
DC Characteristics
AC Characteristics
BCP 51M ... BCP 53M
DC current gain hFE = f (IC)

VCE = 2V
EHP0026110mA101102h10
Total power dissipation Ptot = f (TA*;TS)

* Package mounted on epoxy
200
400
600
800
1000
1200
1400
1600
2000
tot
Permissible Pulse Load

Ptotmax / PtotDC = f (tp) 0 10 10 10 10
totmax
/ P
totDC
Permissible Pulse Load RthJS = f (tp)

10 0
-1 10 10 10 10
thJS
BCP 51M ... BCP 53M
Collector cutoff current ICBO = f (TA)

VCB = 30V10T
15010CBO1001010102
Transition frequency fT = f (IC)

VCE = 10 V
EHP0026010mA101102f
Base-emitter saturation voltage

IC = f (VBEsat), hFE = 101010mA101010
Collector-emitter saturation voltage

IC = f (VCEsat), hFE = 1010
EHP00264C
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