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Partno	Mfg	Dc	Qty	Available	Descript
BCP51-10 \|BCP5110	NXP	N/a	20000	avai	General Purpose Transistors
BCP5116	ST	N/a	23	avai	SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
BCX51	NXP	N/a	10000	avai	SURFACE MOUNT PNP SILICON TRANSISTOR
BCX51-10 \|BCX5110	NXP/PHILIPS	N/a	2000	avai	SMD Small Signal Transistor PNP High Current
BCX51-16 \|BCX5116	PH	N/a	4000	avai	SMD Small Signal Transistor PNP High Current

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BCP51-10-BCP5116-BCX51-BCX51-10-BCX51-16
45 V, 1 A PNP medium power transistor
1. Product profile
1.1 General description
PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages.
[1] Valid for all available selection groups.
1.2 Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) Leadless very small SMD plastic package with medium power capability (SOT1061) AEC-Q101 qualified
1.3 Applications Linear voltage regulators High-side switches Battery-driven devices Power management MOSFET drivers Amplifiers
1.4 Quick reference data
BCP51; BCX51; BC51P A
45 V, 1 A PNP medium power transistors
Rev. 9 — 13 October 2011 Product data sheet
Table 1. Product overview
BCP51 SOT223 SC-73 - BCP54
BCX51 SOT89 SC-62 TO-243 BCX54
BC51PA SOT1061 - - BC54PA
Table 2. Quick reference data
VCEO collector-emitter voltage open base - - 45 V collector current - - 1A
ICM peak collector current single pulse; tp 1ms - - 2A
NXP Semiconductors BCP51; BCX51; BC51PA
45 V, 1 A PNP medium power transistors
2. Pinning information
hFE DC current gain VCE= 2V; = 150 mA - 250
hFE selection -10 VCE= 2V; = 150 mA - 160
hFE selection -16 VCE= 2V; = 150 mA
100 - 250
Table 2. Quick reference data …continued
Table 3. Pinning
SOT223
SOT89
SOT1061
NXP Semiconductors BCP51; BCX51; BC51PA
45 V, 1 A PNP medium power transistors
3. Ordering information
[1] Valid for all available selection groups.
4. Marking
Table 4. Ordering information
BCP51 SC-73 plastic surface-mounted package with increased
heatsink; 4 leads
SOT223
BCX51 SC-62 plastic surface-mounted package; collector pad for good
heat transfer; 3 leads
SOT89
BC51PA HUSON3 plastic thermal enhanced ultra thin small outline
package; no leads; 3 terminals; body22 0.65 mm
SOT1061
Table 5. Marking codes
BCP51 BCP51
BCP51-10 BCP51/10
BCP51-16 BCP51/16
BCX51 AA
BCX51-10 AC
BCX51-16 AD
BC51PA BP
BC51-10PA BQ
BC51-16PA BR
NXP Semiconductors BCP51; BCX51; BC51PA
45 V, 1 A PNP medium power transistors
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
[5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm2.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VCBO collector-base voltage open emitter - 45 V
VCEO collector-emitter voltage open base - 45 V
VEBO emitter-base voltage open collector - 5V collector current - 1A
ICM peak collector current single pulse;  1ms 2A base current - 0.3 A
IBM peak base current single pulse;  1ms 0.3 A
Ptot total power dissipation Tamb25C
BCP51 [1] -0.65 W
[2] -1.00 W
[3] -1.35 W
BCX51 [1] -0.50 W
[2] -0.95 W
[3] -1.35 W
BC51PA [1] -0.42 W
[2] -0.83 W
[3] -1.10 W
[4] -0.81 W
[5] -1.65 W junction temperature - 150 C
Tamb ambient temperature 55 +150 C
Tstg storage temperature 65 +150 C
NXP Semiconductors BCP51; BCX51; BC51PA
45 V, 1 A PNP medium power transistors
NXP Semiconductors BCP51; BCX51; BC51PA
45 V, 1 A PNP medium power transistors
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
[5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm2.
Table 7. Thermal characteristics
Rth(j-a) thermal resistance from
junction to ambient
in free air
BCP51 [1] -- 192 K/W
[2] -- 125 K/W
[3] -- 93 K/W
BCX51 [1] -- 250 K/W
[2] -- 132 K/W
[3] -- 93 K/W
BC51PA [1] -- 298 K/W
[2] -- 151 K/W
[3] -- 114 K/W
[4] -- 154 K/W
[5] -- 76 K/W
Rth(j-sp) thermal resistance from
junction to solder point
BCP51 - - 16 K/W
BCX51 - - 16 K/W
BC51PA - - 20 K/W
NXP Semiconductors BCP51; BCX51; BC51PA
45 V, 1 A PNP medium power transistors
NXP Semiconductors BCP51; BCX51; BC51PA
45 V, 1 A PNP medium power transistors
NXP Semiconductors BCP51; BCX51; BC51PA
45 V, 1 A PNP medium power transistors
NXP Semiconductors BCP51; BCX51; BC51PA
45 V, 1 A PNP medium power transistors
NXP Semiconductors BCP51; BCX51; BC51PA
45 V, 1 A PNP medium power transistors

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