BCM857BS ,45V MATCHED PAIR PNP SMALL SIGNAL TRANSISTOR IN SOT363General descriptionPNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plastic ..
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BCM857BS-BCM857BV-BCM857DS
PNP/PNP matched double transistors
Product profile1.1 General descriptionPNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plastic
packages. The transistors are fully isolated internally.
1.2 Features Current gain matching Base-emitter voltage matching Drop-in replacement for standard double transistors
1.3 Applications Current mirror Differential amplifier
1.4 Quick reference data
BCM857BV; BCM857BS;
BCM857DS
PNP/PNP matched double transistors
Rev. 06 — 28 August 2009 Product data sheet
Table 1. Product overviewBCM857BV SOT666 - BCM847BV BC857BV
BCM857BS SOT363 SC-88 BCM847BS BC857BS
BCM857DS SOT457 SC-74 BCM847DS -
Table 2. Quick reference data
Per transistorVCEO collector-emitter voltage open base - - −45 V collector current - - −100 mA
hFE DC current gain VCE= −5V;= −2mA
200 290 450
NXP Semiconductors BCM857BV/BS/DS
PNP/PNP matched double transistors[1] The smaller of the two values is taken as the numerator.
[2] The smaller of the two values is subtracted from the larger value.
Pinning information Ordering information Marking[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Per devicehFE1/hFE2 hFE matching VCE= −5V;= −2mA
[1] 0.9 1 -
VBE1−VBE2 VBE matching VCE= −5V;= −2mA
[2] --2 mV
Table 2. Quick reference data …continued
Table 3. Pinning emitter TR1 base TR1 collector TR2 emitter TR2 base TR2 collector TR1 001aab555
sym0181 36
TR1
TR2
Table 4. Ordering informationBCM857BV - plastic surface-mounted package; 6 leads SOT666
BCM857BS SC-88 plastic surface-mounted package; 6 leads SOT363
BCM857DS SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457
Table 5. Marking codesBCM857BV 3B
BCM857BS A9*
BCM857DS R8
NXP Semiconductors BCM857BV/BS/DS
PNP/PNP matched double transistors Limiting values[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
Thermal characteristics
Table 6. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
Per transistorVCBO collector-base voltage open emitter - −50 V
VCEO collector-emitter voltage open base - −45 V
VEBO emitter-base voltage open collector - −5V collector current - −100 mA
ICM peak collector current single pulse;≤ 1ms −200 mA
Ptot total power dissipation Tamb≤25°C
SOT666 [1][2]- 200 mW
SOT363 [1]- 200 mW
SOT457 [1]- 250 mW
Per devicePtot total power dissipation Tamb≤25°C
SOT666 [1][2]- 300 mW
SOT363 [1]- 300 mW
SOT457 [1]- 380 mW junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
Table 7. Thermal characteristics
Per transistorRth(j-a) thermal resistance from
junction to ambient
in free air
SOT666 [1][2]- - 625 K/W
SOT363 [1]- - 625 K/W
SOT457 [1]- - 500 K/W
NXP Semiconductors BCM857BV/BS/DS
PNP/PNP matched double transistors[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
Characteristics
Per deviceRth(j-a) thermal resistance from
junction to ambient
in free air
SOT666 [1][2]- - 416 K/W
SOT363 [1]- - 416 K/W
SOT457 [1]- - 328 K/W
Table 7. Thermal characteristics …continued
Table 8. CharacteristicsTamb =25 °C unless otherwise specified
Per transistorICBO collector-base cut-off
current
VCB= −30V; =0A −15 nA
VCB= −30V; =0A;= 150°C −5 μA
IEBO emitter-base cut-off
current
VEB= −5V; =0A −100 nA
hFE DC current gain VCE= −5V;= −10μA 250 -
VCE= −5V;= −2mA
200 290 450
VCEsat collector-emitter
saturation voltage= −10 mA;= −0.5 mA −50 −200 mV= −100 mA;= −5mA −200 −400 mV
VBEsat base-emitter
saturation voltage= −10 mA;= −0.5 mA
[1]- −760 - mV= −100 mA;= −5mA
[1]- −920 - mV
VBE base-emitter voltage VCE= −5V;= −2mA
[2] −600 −650 −700 mV
VCE= −5V;= −10 mA
[2] -- −760 mV collector capacitance VCB= −10V; =ie =0A;
f=1MHz - 2.2 pF emitter capacitance VEB= −0.5V; =ic =0A;
f=1MHz
-10 - pF
NXP Semiconductors BCM857BV/BS/DS
PNP/PNP matched double transistors[1] VBEsat decreases by about 1.7 mV/K with increasing temperature.
[2] VBE decreases by about 2 mV/K with increasing temperature.
[3] The smaller of the two values is taken as the numerator.
[4] The smaller of the two values is subtracted from the larger value. transition frequency VCE= −5V;= −10 mA;= 100 MHz
100 175 - MHz noise figure VCE= −5V;= −0.2 mA; =2kΩ;=10 Hz to
15.7 kHz 1.6 - dB
VCE= −5V;= −0.2 mA; =2kΩ;=1 kHz;= 200Hz 3.1 - dB
Per devicehFE1/hFE2 hFE matching VCE= −5V;= −2mA
[3] 0.9 1 -
VBE1−VBE2 VBE matching VCE= −5V;= −2mA
[4] -- 2 mV
Table 8. Characteristics …continuedTamb =25 °C unless otherwise specified
NXP Semiconductors BCM857BV/BS/DS
PNP/PNP matched double transistors
NXP Semiconductors BCM857BV/BS/DS
PNP/PNP matched double transistors
NXP Semiconductors BCM857BV/BS/DS
PNP/PNP matched double transistors Application information Package outline
