BCM856S ,General Purpose TransistorsCharacteristics65 - - VCollector-emitter breakdown voltage V(BR)CEOI = 10 mA, I = 0 AC BCollector-b ..
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BL24C16 , The device is optimized for use in many industrial and commercial applications
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BCM856S
General Purpose Transistors
PNP Silicon AF Transistor Array Precision matched transistor pair: IC 10% For current mirror applications Low collector-emitter saturation voltage Two (galvanic) internal isolated Transistors Complementary type: BCM846S
EHA07175B2E2B1E1
Maximum Ratings
Thermal ResistanceFor calculation of RthJA please refer to Application Note Thermal Resistance
BCM856S
DC CharacteristicsPuls test: t < 300µs; D < 2%
BCM856S
Electrical Characteristics at TA = 25°C, unless otherwise specified
AC Characteristics
BCM856S
Total power dissipation Ptot = (TS)
50
100
150
200
300
tot
Collector-base capacitance CCB= (VCB0
Emitter-base capacitance CEB0)51010CB0EB0
EB0V
CB0C01
Permissible Pulse Load RthJS = (tp)
10 0
-1 10 10 10 10 10
thJS
Permissible Pulse Loadtotmax/PtotDC = (tp)
10 0 10 10 10 10
totmax
totDC
BCM856S
Transition frequency fCE = 5 V101010
MHz01251010Ι
Base-emitter saturation voltage10
EHP00379
BEsatV
0.6V1.2
Collector-emitter saturation voltageC = 00.30.5
0.10.20.4Ι
Collector current IC = (VBE)CE = Parameter
-6 10
-5 10
-4 10
-3 10
-2 10
-1 10
BCM856S
DC current gain hCE = 5V101010-2-112101010
555Ι
Collector cutoff current ICBO = (TA)CBO = 30 V050100150CB0
Output characteristics IC = (VCE), B = parameter
10
11
12
